MT9HVF6472PY-667F1 Micron Technology Inc, MT9HVF6472PY-667F1 Datasheet - Page 15

• Manufacturer Part Number: MT9HVF6472PY-667F1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF6472PY-667F1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.62A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 90C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Serial Presence-Detect
Table 17:
Table 18:
Serial Presence-Detect Data
PDF: 09005aef81de9391/Source: 09005aef81de9385
HVF9C32_64_128x72.fm - Rev. D 06/08 EN
Parameter/Condition
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 kHz
Power supply current, WRITE: SCL clock frequency = 100 kHz
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA fall time
SDA rise time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
Serial Presence-Detect EEPROM AC Operating Conditions
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
For the latest serial presence-detect data, refer to Micron's SPD page:
www.micron.com/SPD.
= GND to V
the falling or rising edge of SDA.
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
256MB, 512MB, 1GB (x72, SR): 240-Pin DDR2 SDRAM VLP RDIMM
DD
DD
15
Symbol
t
Symbol
t
t
t
V
HD:DAT
SU:DAT
t
SU:STO
SU:STA
t
t
t
H:STA
t
I
t
DDSPD
HIGH
LOW
f
WRC
I
WRC) is the time from a valid stop condition of a write
V
t
t
V
CC W
BUF
V
I
I
CC R
SCL
AA
DH
I
t
LO
t
SB
OL
t
LI
IH
R
F
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
DDSPD
Min
200
100
0.2
1.3
0.6
0.6
0.6
0.6
1.3
–
–
0
–
–
–
Min
0.05
–0.6
1.7
0.1
1.6
0.4
2.0
–
× 0.7
Serial Presence-Detect
Max
300
300
400
0.9
50
10
–
–
–
–
–
–
–
–
–
©2006 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
0.4
3.0
3.0
4.0
1.0
3.0
3.6
Units
kHz
+ 0.5
× 0.3
ms
µs
µs
ns
ns
ns
µs
µs
µs
ns
µs
ns
µs
µs
Notes
Units
mA
mA
µA
µA
µA
V
V
V
V
1
2
2
3
4