TIM4450-25UL Toshiba, TIM4450-25UL Datasheet
TIM4450-25UL
Specifications of TIM4450-25UL
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TIM4450-25UL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM4450-25UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM4450-25UL SYMBOL ...
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... RF PERFORMANCE 47 VDS= 10V ≅ IDS 6.8A 46 Pin= 34.5 dBm 4.2 46 f=4.7 GHz VDS= 10V 45 ≅ IDS TIM4450-25UL Output Power vs. Frequency 4.4 4.6 4.8 Frequency (GHz) Output Power vs. Input Power 6. Pin (dBm ) 3 5 5.2 5 η add ...
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... TIM4450-25UL Power Dissipation vs. Case Temperature ℃) IM3 vs. Output Power Characteristics -20 VDS= 10V ≅ IDS 6.8A f= 4.7GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level ...