2N4856A-E3 Vishay, 2N4856A-E3 Datasheet

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2N4856A-E3

Manufacturer Part Number
2N4856A-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of 2N4856A-E3

Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / Rohs Status
Compliant
The 2N4856A/4857A/4858A all-purpose JFET analog
switches offer low on-resistance, low capacitance, good
isolation, and fast switching.
Document Number: 70243
S-04028—Rev. D, 04-Jun-01
D Low On-Resistance: 2N4856A
D Fast Switching—t
D High Off-Isolation—I
D Low Capacitance: 3 pF
D Low Insertion Loss
Number
2N4856A
2N4857A
2N4858A
<25 W
Part
V
–0.8 to –4
–4 to –10
–2 to –6
GS(off)
(V)
ON
: 4 ns
D(off)
: 5 pA
V
Min (V)
(BR)GSS
–40
–40
–40
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
I
DSS
N-Channel JFETs
(mA)
50
20
8
D
Min
S
1
2
TO-206AA
Top View
r
(TO-18)
DS(on)
(W)
25
40
60
Max
Hermetically-sealed TO-206AA (TO-18) packaging allows full
military processing (see Military Information). For similar
products in TO-226AA (TO-92) and SOT-23 packages, see the
J/SST111 series data sheet. For
2N5564/5565/5566 data sheet.
3
G and Case
I
D(off)
(pA)
5
5
5
Typ
2N4856A/4857A/4858A
t
ON
(ns)
4
4
4
Typ
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
Vishay Siliconix
similar duals, see the
www.vishay.com
7-1

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2N4856A-E3 Summary of contents

Page 1

... D Low On-Resistance: 2N4856A < Fast Switching— High Off-Isolation— D(off) D Low Capacitance Low Insertion Loss The 2N4856A/4857A/4858A all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Document Number: 70243 S-04028—Rev. D, 04-Jun-01 N-Channel JFETs I Min r Max ...

Page 2

... Vishay Siliconix Gate-Drain, Gate-Source Voltage : (2N4856A-58A) Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Lead Temperature ( / ” from case for 10 seconds) 16 Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS c Gate Operating Current I G Drain Cutoff Current ...

Page 3

... Document Number: 70243 S-04028—Rev. D, 04-Jun-01 _ 100 200 = 160 80 I DSS 120 –8 – – 105 125 – 2N4856A/4857A/4858A Vishay Siliconix On-Resistance vs. Drain Current T = 25_C –2 V GS(off) –4 V – – Drain Current (mA) D Turn-On Switching t approximately independent –10 V GS( d(on d(on) ...

Page 4

... Vishay Siliconix Noise Voltage vs. Frequency 100 100 – Frequency (Hz) Gate Leakage Current 125_C 100 25_C 0 – Drain-Gate Voltage (V) DG Common-Gate Forward Admittance 100 25_C A – 0.1 100 200 f – Frequency (MHz) www.vishay.com 7-4 _ Forward Transconductance and Output Conductance 100 k 100 ...

Page 5

... V –0 –1 –1.5 V –2 –2.5 V –3 1.0 0 0.8 2N4858A – GS(H) 1910 W V GS( 2N4856A/4857A/4858A Vishay Siliconix Output Characteristics V = –2 V GS(off 0.2 0.4 0.6 0.8 V – Drain-Source Voltage (V) DS Output Characteristics V = –8 V GS(off 0.2 0.4 0.6 0.8 V – Drain-Source Voltage (V) ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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