KSK30YTANL Fairchild Semiconductor, KSK30YTANL Datasheet

KSK30YTANL

Manufacturer Part Number
KSK30YTANL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of KSK30YTANL

Channel Type
N
Configuration
Single
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature (max)
125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Compliant
©2002 Fairchild Semiconductor Corporation
Low Noise PRE-AMP. Use
• High Input Impedance: I
• Low Noise: NF=0.5dB (TYP)
• High Voltage: V
Silicon N-channel Junction Fet
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
P
T
T
BV
I
I
V
C
C
NF
G
GSS
DSS
Symbol
J
STG
Y
GDS
D
GS
iss
rss
FS
GDS
Symbol
(off)
Classification
Classification
I
DSS
Gate-Drain Breakdown Voltage
Gate Leak Current
Drain Leak Current
Gate-Source Voltage
Forward Transfer Admittance
Input Capacitance
Feedback Capacitance
Noise Figure
(mA)
GDS
Gate-Drain Voltage
Gate-Current
Collector Dissipation
Junction Temperature
Storage Temperature
= -50V
GSS
Parameter
=1nA (MAX)
0.30 ~ 0.75
T
R
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
KSK30
V
V
V
V
V
V
V
f=1MHz
V
R
f=120Hz
DS
GS
DS
DS
DS
DS
GD
DS
G
=100K
=0, I
= -30V, V
=10V, V
=10V, I
=10V, V
=0, V
=15V, V
=10V, V
0.60 ~ 1.40
Test Condition
G
O
GS
= -100 A
D
GS
GS
=0, f=1MHz
GS
DS
=0.1 A
DS
=0, f=1KHz
=0
=0
=0
=0
1.20 ~ 3.00
1. Source 2. Gate 3. Drain
1
Min.
-0.4
-50
0.3
1.2
Y
-55 ~ 125
Ratings
100
125
-50
10
Typ.
8.2
2.6
0.5
TO-92
2.60 ~ 6.50
Max.
6.5
-1
-5
5
Rev. B1, November 2002
G
Units
mW
mA
V
C
C
Units
mA
mS
nA
pF
pF
dB
V
V

Related parts for KSK30YTANL

KSK30YTANL Summary of contents

Page 1

... DSS V (off) Gate-Source Voltage GS Y Forward Transfer Admittance FS C Input Capacitance iss C Feedback Capacitance rss NF Noise Figure I Classification DSS Classification I (mA) DSS ©2002 Fairchild Semiconductor Corporation KSK30 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V = -100 -30V =10V ...

Page 2

... V = -1. -1.6V GS 0.0 0.0 0.8 1.6 V [V], DRAIN-SOURCE VOLTAGE DS Figure 6.4 4.8 3.2 1.6 0.0 0.0 1.6 3.2 I [mA], DRAIN CURRENT D Figure 5. Yfs -I ©2002 Fairchild Semiconductor Corporation 6 5 -0.2V 4 -0. -0. -0. -1.0V GS 0.8 R 0.0 -3.2 ...

Page 3

... GS f=1kHz 25℃ 0.1 0 [mA], DRAIN CURRENT DSS Figure 7. Yfs -I 160 140 120 100 100 C], CASE TEMPERATURE C Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 1000 100 100 DSS 125 150 175 200 iss rss 1MHz - [V], GATE-DRAIN VOLTAGE GD V [V], GATE-SOURCE VOLTAGE GS Figure 8 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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