MT48H8M16LFB4-75:K TR Micron Technology Inc, MT48H8M16LFB4-75:K TR Datasheet - Page 18

MT48H8M16LFB4-75:K TR

Manufacturer Part Number
MT48H8M16LFB4-75:K TR
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H8M16LFB4-75:K TR

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
70mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Table 9: I
Notes 1, 5, 9, and 10 apply to all parameters and conditions; V
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Parameter/Condition
Self refresh:
CKE = LOW;
Address and control inputs are sta-
ble; Data bus inputs are stable
DD7
t
CK =
Specifications and Conditions (x16 and x32)
t
CK (MIN);
Notes:
10. Values for I
1. A full initialization sequence is required before proper device operation is ensured.
2. I
3. The I
4. Address transitions average one transition every 2 clocks.
5. Measurement is taken 500ms after entering into this operating mode to provide tester
6. Other input signals can transition only one time for every 2 clocks and are otherwise at
7. CKE is HIGH during the REFRESH command period
8. Typical values at 25˚C (not a maximum value).
9. Enables on-die refresh and address counters.
minimum cycle time and the outputs open.
quency alteration for the test condition.
measuring unit settling time.
valid V
limit is a nominal value and does not result in a fail value.
ture range. All other I
DD
is dependent on output loading and cycle rates. Specified values are obtained with
DD
IH
current will increase or decrease proportionally according to the amount of fre-
or V
1/16 array, 85˚C
1/16 array, 45˚C
Full array, 85˚C
Full array, 45˚C
1/2 array, 85˚C
1/2 array, 45˚C
1/4 array, 85˚C
1/4 array, 45˚C
1/8 array, 85˚C
1/8 array, 45˚C
DD7
IL
levels.
85˚C full array and partial array are guaranteed for the entire tempera-
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
DD7
values are estimated.
18
DD
Electrical Specifications – I
/V
DDQ
= 1.70–1.95V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
t
RFC (MIN) else CKE is LOW. The I
I
200
140
160
120
140
100
120
100
DD7
95
90
©2008 Micron Technology, Inc. All rights reserved.
DD
Parameters
Unit
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
DD7

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