GP1S196HCZ0F Sharp Electronics, GP1S196HCZ0F Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/602/sharp_electronics_sml.jpg)
GP1S196HCZ0F
Manufacturer Part Number
GP1S196HCZ0F
Description
Manufacturer
Sharp Electronics
Type
Transmissiver
Datasheet
1.GP1S196HCZ0F.pdf
(11 pages)
Specifications of GP1S196HCZ0F
Number Of Elements
1
Output Device
Phototransistor
Slit Width
0.3mm
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
30mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
150000ns
Rise Time
150000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fig.7 Collector-emitter Saturation Votage vs.
Fig.9 Response Time vs. Load Resistance
Fig.11 Relative Collector Current vs. Shield
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
1 000
Ambient Temperature
0.18
0.16
0.14
0.12
0.08
0.06
0.04
100
0.2
0.1
Distance (1)
10
1
−25
100
0.1
90
80
70
60
50
40
30
20
10
0
V
I
T
C
0
a
CE
=100μA
=25˚C
=5V
I
V
F
=5mA
CE
=5V
Ambient temperature T
0
Shield moving distance L (mm)
0.5
Load resistance R
1
t
t
f
t
r
d
25
1
L
10
50
a
(kΩ)
(˚C)
t
s
I
I
F
C
1.5
=10mA
=40μA
75
0
100
L
2
5
Fig.8 Collector Dark Current vs.
Fig.10 Test Circuit for Response Time
Fig.12 Relative Collector Current vs. Shield
Input
R
D
10
Ambient Temperature
10
10
10
10
Distance (1)
100
10
90
80
70
60
50
40
30
20
10
6
7
8
9
0
0
0
V
CE
I
V
F
=5mA
V
CE
R
CC
20V
=5V
L
Shield moving distance L (mm)
Ambient temperature T
25
0.5
GP1S196HCZ0F/GP1S196HCZSF
Output
Output
Input
50
1
t
t
d
r
a
(˚C)
Sheet No.: D3-A01001EN
75
1.5
100
t
t
2
s
f
10%
90%