QST108KT6 STMicroelectronics, QST108KT6 Datasheet - Page 32

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QST108KT6

Manufacturer Part Number
QST108KT6
Description
Manufacturer
STMicroelectronics
Datasheet

Specifications of QST108KT6

Lead Free Status / Rohs Status
Compliant
Electrical characteristics
6.3
6.3.1
6.3.2
32/51
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
The product is stressed by two electro magnetic events until a failure occurs:
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Table 23.
Electro magnetic interference (EMI)
The product is monitored in terms of emission. This emission test is in line with the norm
SAE J 1752/3 which specifies the board and the loading of each pin.
Table 24.
1. Data based on characterization results, not tested in production.
Symbol
S
Symbol
V
EMI
V
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
FESD
FFTB
SS
through a 100pF capacitor, until a functional disturbance occurs. This test
Peak level
Parameter
Functional EMS
EM emissions
Voltage limits to be applied on any I/O
pin to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100pF on V
pins to induce a functional disturbance
V
complies with SAE J
1752/3
DD
=5V, T
Parameter
Conditions
A
=+25°C,
DD
and V
30 MHz to 130 MHz
0.1 MHz to 30 MHz
130 MHz to 1 GHz
Frequency Band
DD
SAE EMI Level
Monitored
V
complies with IEC 1000-4-2
V
complies with IEC 1000-4-4
DD
DD
=5V, T
=5V, T
A
A
Conditions
=+25°C,
=+25°C
f
DEVICE
= 4 MHz
2.5
20
20
13
DD
(1)
QST108
and
Level/
Class
dBμV
Unit
3B
4A
-

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