SI3861DV-T1-E3 Vishay, SI3861DV-T1-E3 Datasheet

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SI3861DV-T1-E3

Manufacturer Part Number
SI3861DV-T1-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of SI3861DV-T1-E3

Switch Type
High Side
Power Switch Family
SI3861DV
Input Voltage
4.5 to 20V
Power Switch On Resistance
145mOhm
Output Current
2.3A
Number Of Outputs
Single
Mounting
Surface Mount
Package Type
TSOP
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Pin Count
6
Power Dissipation
830W
Lead Free Status / Rohs Status
Compliant

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Manufacturer
Quantity
Price
Part Number:
SI3861DV-T1-E3
Manufacturer:
VISHAY
Quantity:
69 200
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Part Number:
SI3861DV-T1-E3
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Quantity:
20 000
The Si3861DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET
n-channel, with an external resistor, can be used as a
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
ON/OFF
R1
R2
C1
V
4 5
4.5 to 20
105-m
4.5 to 20
1.5 to 8
DS2
V
R2
IN
(V)
20
C
R1
i
Optional Slew-Rate Control
Optional Slew-Rate Control
-V Logic Level Control
-V Input
Low r
Pull-Up Resistor
is tailored for use as a load switch.
4
6
5
DS(on)
Si3861DV
Q2
Q1
0.150 @ V
0.175 @ V
0.105 @ V
TrenchFET
r
DS(on)
1
R2
IN
IN
IN
( )
= 5.0 V
= 4.5 V
= 10 V
2, 3
6
Load Switch with Level-Shift
Typical 10 k
Typical 0 to 100 k *
C
o
Typical 1000 pF
C1
to 1 m *
V
GND
I
LOAD
New Product
D
OUT
(A)
2.3
1.9
1.7
The
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
The Si3861DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Low Profile, Small Footprint TSOP-6 Package
3000-V ESD Protection On Input Switch, V
Adjustable Slew-Rate
20
16
12
8
4
0
0
Note: For R2 switching variations with other V
I
V
C
C
L
ON/OFF
i
o
= 1 A
= 10 F
= 1 F
2
combinations See Typical Characteristics
R2 @ V
= 3 V
Switching Variation
t
r
IN
4
= 5 V, R1 = 20 k
t
R2 (k )
t
d(on)
d(off)
www.vishay.com FaxBack 408-970-5600
t
f
6
Vishay Siliconix
8
Si3861DV
ON/OFF
IN
/R1
10
2-1

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SI3861DV-T1-E3 Summary of contents

Page 1

... GND Note: For R2 switching variations with other V combinations See Typical Characteristics The Si3861DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types ...

Page 2

... ON Characteristics Input Voltage Range On-Resistance (p-channel On-State (p-channel) Drain-Current On-State (p-channel) Drain-Current Notes a. Surface Mounted on FR4 Board 12 ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2%. www.vishay.com FaxBack 408-970-5600 2-2 New Product Si3861DV ON/OFF R2 Symbol ON/OFF a, b Continuous Pulsed stg ) ESD ...

Page 3

... 0.02 0.00 –0.02 –0.04 –50 – – Junction Temperature ( C) J Document Number: 70861 S-60513—Rev. A, 05-Apr-99 New Product 1.0 0.8 0.6 0.4 0 1.0 0.8 0 0.4 0.2 0 100 125 150 Si3861DV Vishay Siliconix V vs DROP 1 ON/OFF T = 125 – DROP 1 ON/OFF T = 125 ...

Page 4

... Si3861DV Vishay Siliconix Normalized On-Resistance vs. Junction Temperature 1 1 1.6 ON/OFF 1.4 1.2 1.0 0.8 0.6 0.4 –50 – – Junction Temperature ( C) J Switching Variation ON/OFF d(off d(on Switching Variation 300 ON/OFF www.vishay.com FaxBack 408-970-5600 2-4 New Product 100 125 150 50 40 ...

Page 5

... S-60513—Rev. A, 05-Apr-99 New Product Switching Variation 4 300 d(off ON/OFF d(on –2 – Square Wave Pulse Dureation (sec) Si3861DV Vishay Siliconix 100 Notes Duty Cycle Per Unit Base = R = 150 C/W thJA ( – thJA 4. Surface Mounted 10 100 600 www.vishay.com FaxBack 408-970-5600 2-5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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