MT48H4M32LFB5-6:K TR Micron Technology Inc, MT48H4M32LFB5-6:K TR Datasheet - Page 17

• Manufacturer Part Number: MT48H4M32LFB5-6:K TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H4M32LFB5-6:K TR

• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – I
Table 7: I
Note 1 applies to all parameters and conditions; V
Table 8: I
Note 1 applies to all parameters and conditions; V
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Parameter/Condition
Operating current: Active mode; burst = 1; READ or WRITE;
t
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks
active; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks
active after
Operating current: Burst mode; READ or WRITE; All banks active,
half of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
Parameter/Condition
Operating current: Active mode; burst = 1; READ or WRITE;
=
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Nonpower-down mode; All banks idle; CKE =
HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All
banks active; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
banks active after
Operating current: Burst mode; READ or WRITE; All banks ac-
tive, half of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
RC (MIN)
t
RC (MIN)
DD
DD
t
RCD met; No accesses in progress
Specifications and Conditions (x16)
Specifications and Conditions (x32)
t
RCD met; No accesses in progress
DD
t
t
RFC =
RFC = 7.8125μs
DD
DD
Parameters
t
t
RFC =
RFC = 7.8125μs
/V
/V
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
DDQ
DDQ
t
RFC (MIN)
t
= 1.70–1.95V
= 1.70–1.95V
RFC (MIN)
t
t
17
RC =
RC
Electrical Specifications – I
Symbol
I
I
I
I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
DD2N
DD3N
I
I
I
Symbol
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
I
I
I
I
I
DD2N
DD3N
I
I
I
DD2P
DD3P
DD1
DD4
DD5
DD6
I
ZZ
200
100
70
15
20
90
10
-6
200
3
5
50
15
20
80
90
10
-6
3
5
Max
Max
200
-75
55
12
15
90
85
10
-75
200
3
3
©2008 Micron Technology, Inc. All rights reserved.
40
12
15
70
85
10
3
3
DD
Unit
mA
mA
mA
mA
mA
mA
mA
μA
μA
Unit
mA
mA
mA
mA
mA
mA
mA
μA
μA
Parameters
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5