MT46H16M16LFBF-6:H TR Micron Technology Inc, MT46H16M16LFBF-6:H TR Datasheet - Page 78
MT46H16M16LFBF-6:H TR
Manufacturer Part Number
MT46H16M16LFBF-6:H TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H16M16LFBF-6H_TR.pdf
(96 pages)
Specifications of MT46H16M16LFBF-6:H TR
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
100mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 41: WRITE-to-PRECHARGE – Uninterrupting
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DQ
DQ
DQ
DM
DM
DM
CK
1
6
6
6
WRITE
Bank a,
Col b
T0
Notes:
2,4
t
DQSS
t
DQSS
t
DQSS
1. An uninterrupted burst 4 of is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4. The PRECHARGE and WRITE commands are to the same device. However, the PRE-
5.
6. D
D
IN
CHARGE and WRITE commands can be to different devices; in this case,
required and the PRECHARGE command can be applied earlier.
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
IN
b = data-in for column b.
D
D
IN
IN
T1n
D
IN
D
D
IN
IN
NOP
D
T2
IN
D
D
IN
IN
T2n
D
IN
78
D
IN
NOP
T3
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
NOP
WR
T4
5
Don’t Care
(a or all)
PRE
T5
Bank
3,4
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
Transitioning Data
t
WR is not
T6
NOP
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