MT4JSF12864HZ-1G1D1 Micron Technology Inc, MT4JSF12864HZ-1G1D1 Datasheet - Page 9

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MT4JSF12864HZ-1G1D1

Manufacturer Part Number
MT4JSF12864HZ-1G1D1
Description
MOD DDR3 SDRAM 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT4JSF12864HZ-1G1D1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
840mA
Number Of Elements
4
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
204
Mounting
Socket
Memory Type
DDR3 SDRAM
Memory Size
1GB
Speed
1066MT/s
Features
-
Package / Case
200-SODIMM
Lead Free Status / Rohs Status
Supplier Unconfirmed
Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef83b05507
jsf4c64_128x64hz.pdf - Rev. B 3/10
V
V
Symbol Parameter
REFDQ(DC)
REFCA(DC)
I
V
I
V
VREF
I
VTT
T
T
OZ
V
DD
I
Symbol
TT
I
A
C
IN
V
, V
DD
OUT
V
Input reference voltage command/address bus
I/O reference voltage DQ bus
Termination reference current from V
Termination reference voltage (DC) –
command/address bus
Input leakage current;
Any input 0V ≤ V
V
(All other pins not under test
= 0V)
Output leakage current;
0V ≤ V
DQ and ODT are disabled;
ODT is HIGH
V
or V
test = 0V)
Module ambient operating
temperature
DDR3 SDRAM component
case operating temperature
DD
REF
REF
REFCA
supply voltage
input 0V ≤ V
supply leakage current; V
OUT
Parameter
V
Voltage on any pin relative to V
DD
= V
≤ V
Notes:
supply voltage relative to V
DD
DDQ
/2 (All other pins not under
IN
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
IN
;
≤ V
≤ 0.95V
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,” avail-
4. The refresh rate is required to double when 85°C < T
DD
and address signals’ voltage margin and will reduce timing margins.
able on Micron’s Web site.
A
TT
;
and T
termination voltage in excess of the stated limit will adversely affect the command
Address inputs,
RAS#, CAS#,
WE#, S#, CKE,
ODT, BA, CK,
CK#
DM
DQ, DQS, DQS#
REFDQ
Commercial
Commercial
C
are simultaneous requirements.
= V
TT
DD
SS
SS
/2
512MB, 1GB (x64, SR) 204-Pin DDR3 SODIMM
0.49 × V
9
0.49 x V
0.49 x V
1.425
–600
Min
–8
–2
–5
–4
DD
0
0
- 20mV 0.5 × V
DD
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–0.4
–0.4
0.5 x V
0.5 x V
Nom
1.5
0
0
0
0
DD
DD
DD
C
0.51 × V
Electrical Specifications
≤ 95°C.
+1.975
+1.975
0.51 x V
0.51 x V
Max
1.575
Max
+600
+70
+85
© 2009 Micron Technology, Inc. All rights reserved.
DD
+8
+2
+5
+4
+ 20mV
DD
DD
Units
mA
µA
µA
µA
°C
°C
V
V
V
V
Units
V
V
Notes
2, 3, 4
2, 3
1

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