TLP251(D4-TP5,F) Toshiba, TLP251(D4-TP5,F) Datasheet

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TLP251(D4-TP5,F)

Manufacturer Part Number
TLP251(D4-TP5,F)
Description
Manufacturer
Toshiba
Datasheet

Specifications of TLP251(D4-TP5,F)

Number Of Elements
1
Input Type
DC
Output Type
Push-Pull
Forward Voltage
1.8V
Forward Current
20mA
Isolation Voltage
2500Vrms
Package Type
PDIP
Operating Temp Range
-20C to 85C
Propagation Delay Time
1000ns
Pin Count
8
Mounting
Through Hole
Reverse Breakdown Voltage
5V
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
Truth Table
Input threshold current: I
Supply current (I
Supply voltage (V
Output current (I
Switching time (t
Isolation voltage: 2500Vrms(min.)
UL recognized: UL1577, file no.E67349
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
Highest Permissible Over Voltage
(Note):When a EN60747-5-2 approved type is needed,
Input
LED
Please designate “Option(D4)”
On
Off
CC
pLH
O
CC
): ±0.4A(max.)
): 11mA(max.)
): 10
Tr1
On
Off
/ t
pHL
F
35V
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
=5mA(max.)
): 1μs(max.)
GaAℓA
Tr2
Off
On
s light emitting diode and a
TLP251
: 4000V
PK
PK
1
Schematic
V
Pin Configuration (top view)
F
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
3
1
2
3
4
2
Weight: 0.54 g (typ.)
TOSHIBA
I
F
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
7 : N.C.
8 : V
O
CC
(Output)
11−10C4
2007-10-01
TLP251
Unit in mm
6
8
7
5
I
CC
(T
I
r
O
(T
1)
6
5
8
r
2)
V
GND
V
CC
O

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TLP251(D4-TP5,F) Summary of contents

Page 1

... TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC Inverter For Air Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive The TOSHIBA TLP251 consists of a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Recommended Operating Conditions Characteristic Input current, on (Note6) Input voltage, off Supply voltage Peak output current Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an ...

Page 4

Switching Characteristics Characteristic Propagation L→H delay time H→L Output rise time Output fall time Common mode transient immunity at high level output Common mode transient immunity at low level output * All typical values are at Ta=25 ℃ Test Circuit ...

Page 5

Test Circuit pLH, pHL 0.1μF F 100Ω Test Circuit SW: ...

Page 6

I – 100 ° 0.5 0.3 0.1 0.05 0.03 0.01 1.4 1.8 1.0 1.2 1.6 Forward voltage V ( – ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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