K4T1G164QF-BCE6 Samsung Semiconductor, K4T1G164QF-BCE6 Datasheet - Page 6

• Manufacturer Part Number: K4T1G164QF-BCE6
• Manufacturer: Samsung Semiconductor

Specifications of K4T1G164QF-BCE6

• Lead Free Status / Rohs Status: Compliant

K4T1G044QF
K4T1G084QF
K4T1G164QF
3.2 x8 Package Pinout (Top view) : 60ball FBGA Package
NOTE :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and input data masking
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. V
function is disabled.
DDL
and V
SSDL
A
B
C
D
E
G
H
K
F
J
L
are power and ground for the DLL. It is recommended that they be isolated on the device from V
Top view
(See the balls through package)
Ball Locations (x8)
Populated ball
Ball not populated
V
V
DQ6
DQ4
BA2
V
V
V
DDQ
DDL
1
DD
SS
DD
NU/RDQS
A10/AP
V
V
V
DQ1
CKE
BA0
A12
A3
A7
SSQ
SSQ
REF
2
datasheet
DM/RDQS
V
DQ3
BA1
V
V
WE
NC
A1
A5
A9
DDQ
3
SS
SS
4
- 6 -
G
5
A
B
C
D
E
F
H
K
J
L
6
1
2
V
V
V
DQS
RAS
CAS
DQ2
A11
SSDL
NC
A2
A6
SSQ
DDQ
3
7
4
5
V
V
DQS
DQ0
A13
6
CK
CK
CS
A0
A4
A8
SSQ
SSQ
8
7
8
ODT0
9
V
V
DQ7
DQ5
V
V
V
DDQ
DDQ
DD
9
DD
DD
SS
,V
DDQ
DDR2 SDRAM
, V
SS
, and V
SSQ
.
Rev. 1.11