J304-TR1-E3 Vishay, J304-TR1-E3 Datasheet - Page 2

J304-TR1-E3

Manufacturer Part Number
J304-TR1-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of J304-TR1-E3

Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-30V
Drain-gate Voltage (max)
-30V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Compliant
J304/305
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
SPECIFICATIONS (T
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input Noise Voltage
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (T
High-Frequency
Common-Source Input Conductance
Common-Source Input Susceptance
Common-Source Output Conductance
Common-Source Output Susceptance
Common-Source Forward Transconductance
Common-Source Power Gain
Noise Figure
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms, duty cycle v2%.
Parameter
Parameter
b
b
A
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
V
(BR)GSS
I
DS(on)
I
I
C
GS(off)
I
C
D(off)
C
GS(F)
DSS
GSS
GSS
g
g
e
I
oss
G
os
rss
iss
fs
n
Symbol
g
b
G
g
b
NF
g
oss
oss
iss
iss
fs
ps
V
V
DS
DS
= 15 V V
= 15 V, V
V
V
V
V
V
I
V
V
Test Conditions
V
I
G
GS
DS
G
DS
DS
GS
DG
DS
DS
= −1 mA , V
= 1 mA , V
= −20 V, V
= 10 V, V
= 15 V, V
= 15 V, V
= 0 V, I
= 10 V, V
= 15 V, I
= 10 V, I
f = 100 Hz
f = 1 MHz
f = 1 MHz
GS
GS
V
V
V
V
Test Conditions
DS
DS
DS
DS
D
= 0 V f = 1 kHz
= 0 V, f = 1 kHz
GS
D
= 300 mA
D
DS
DS
GS
= 15 V, V
= 15 V V
= 15 V, V
GS
GS
= 15 V, I
DS
A
= 1 mA
= 1 nA
= −6 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 25_C UNLESS OTHERWISE NOTED)
T
A
D
GS
GS
GS
= 100_C
= 5 mA
= 0 V
= 0 V
= 0 V
R
G
= 1 kW
Typ
−0.2
−35
−20
200
0.7
2.2
0.7
−2
10
2
1
a
MHz
Min
100
−30
0.8
4.4
1.7
4.5
−2
80
60
20
2
5
J304
J304
Limits (Typ)
MHz
Max
−100
400
800
7.5
7.5
3.6
4.2
3.8
15
50
80
11
−6
Limits
S-50077—Rev. E, 24-Jan-05
Document Number: 70236
MHz
Min
−0.5
100
−30
0.8
80
60
1
3
2
3
J305
J305
Max
−100
MHz
400
−3
50
8
Unit
Unit
√Hz
mA
mS
nV⁄
mS
mS
mS
pA
nA
pA
pA
mS
pF
p
mS
mS
dB
dB
W
V
V
V
NH

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