KBU4D-E4/1 Vishay, KBU4D-E4/1 Datasheet - Page 3
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KBU4D-E4/1
Manufacturer Part Number
KBU4D-E4/1
Description
Manufacturer
Vishay
Datasheet
1.KBU4D-E41.pdf
(4 pages)
Specifications of KBU4D-E4/1
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
200A
Avg. Forward Curr (max)
4A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case KBU
Operating Temp Range
-50C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Automotive
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88656
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
50
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
T
1.0
J
60
= 100 °C
T
J
= 25 °C
1.1
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
150
100
75
50
25
0.052 (1.3)
0.048 (1.2)
0
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.1
0.165 (4.2)
0.185 (4.7)
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU4A thru KBU4M
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3