GP1S56TJ000F Sharp Electronics, GP1S56TJ000F Datasheet - Page 2

• Manufacturer Part Number: GP1S56TJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S56TJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 2mm
• Slit Width: 0.15mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: Compact
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 110000ns
• Rise Time: 90000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Transfer
charac-
teristics
Fig. 1 Forward Current vs.
Fig. 3 Peak Forward Current vs.
Output
Electro-optical Characteristics
Input
2000
1000
500
200
100
60
50
40
30
20
10
50
20
0
- 25
Ambient Temperature
Duty Ratio
5
10
- 2
Forward voltage
Peak forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter
saturation voltage
Response time
0
Ambient temperature T
Parameter
2
25
Duty ratio
5
10
- 1
Pulse width <= 100 s
T
50
a
= 25˚C
a
2
( ˚C )
Rise time
Fall time
75 85
5
100
1
Symbol
V
V
I
CE ( sat )
V
CEO
I
Ic
t
t
FM
R
r
r
F
I
I
V
V
V
I
I
V
R
F
FM
F
C
CE
CE
CE
L
R
= 20mA
= 40mA
= 0.25mA
= 1K
= 3V
= 0.5A
= 2V, I
= 20V
= 5V, I
Fig. 2 Collector Power Dissipation vs.
Fig. 4 Forward Current vs.
Conditions
100
500
200
120
100
80
75
60
40
20
50
20
10
F
C
- 25
5
2
1
0
Forward Voltage
= 20mA
Ambient Temperature
= 0.5mA
0
0.5
0
T
Ambient temperature T
a
Forward voltage V
= 75˚C
1
50˚C
25
MIN.
0.4
-
-
-
-
-
-
-
1.5
50
TYP.
F
1.2
38
48
2
3
1
-
-
-
( V )
a
( ˚C )
25˚C
- 25˚C
0˚C
75 85
2.5
MAX.
110
100
1.4
0.4
10
90
( Ta = 25˚C )
4
-
GP1S56T
100
3
Unit
mA
nA
V
V
V
A
s
s