AR629AU9/883/NOPB National Semiconductor, AR629AU9/883/NOPB Datasheet - Page 10

• Manufacturer Part Number: AR629AU9/883/NOPB
• Manufacturer: National Semiconductor

Specifications of AR629AU9/883/NOPB

• Operating Temperature (max): 125C
• Lead Free Status / Rohs Status: Compliant

MNAR629A-X REV 0A0
TDLWM
TDRSTAC
TDTRIVS
THRAL
THRAT
TSAR
TSDMA
TWBUSQ
TWBUSQ1
TWRIVS
TDAOBUSR
TAODMA
TDBUSQ
TDBUSQ1
Electrical Characteristics
AC: INTERNAL REGISTER/RECEIVE DATA CHARACTERISTICS (Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
AC: INTERNAL REGISTER/TRANSMIT DATA CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
SYMBOL
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
Delay from BUSQ,
to LWM valid
Delay from RIVS
High to Stac High
Delay from end of
DMA to trailing
RIVS Low
AO hold after
leading RIVS
falling edge
AO hold after
trailing RIVS
falling edge
AO setup prior to
RIVS falling edge
Delay from end of
last bit time to
DMA start
Width of BUSQ
High during data
sync
Width Bus Quiet
high during
interstring gap
RIVS pulse Low
width
Time from AO
valid to DMA
start
Time from AO
valid to DMA
window start
Delay from end of
last bit time to
BUSQ
Delay from last
word of string to
BUSQ
PARAMETER
Vdd = 5V +5%
Vdd = 4.75V, Vdd = 5.25V
Vdd = 5V +5%
Vdd = 4.75V, Vdd = 5.25V
Vdd = 4.75V, Vdd = 5.25V
Vdd = 4.75V, Vdd = 5V +5%
Vdd = 4.75V, Vdd = 5.25V
Vdd = 5V +5%
Vdd = 5V +5%
Vdd = 5V +5%
CONDITIONS
10
NOTES
MICROCIRCUIT DATA SHEET
PIN-
NAME
12T
2T-30
2T
65T
4T-35
2T-35
13T
2T-10
30T
1T
6T-40
5T-40
MIN
20T
2T+35
46T
20T
38T
64T
2T+35
7T+46
7T+46
MAX
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
GROUPS
SUB-