MB4S-GT3 Sensitron Semiconductors, MB4S-GT3 Datasheet - Page 2

• Manufacturer Part Number: MB4S-GT3
• Manufacturer: Sensitron Semiconductors

Specifications of MB4S-GT3

• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 400V
• Rms Voltage (max): 280V
• Peak Non-repetitive Surge Current (max): 30A
• Avg. Forward Curr (max): 0.8@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1V
• Package Type: MBS
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Compliant


                              















13

   
0.40
0.80
60
50
40
30
20
10
0
0
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
1
1327
27   B
40
Fig. 1 Output Current Derating Curve
T , AMBIENT TEMPERATURE (°C)
NUM BER OF CYCLES AT 60 Hz
A
60
80
10













100
Single half-sine-Wave
(JEDEC M ethod)
60 Hz Resistive or
0.01
100
1.0
0.1
Inductive load
10
120
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
140
20

8         

100
40
T = 25°C
T = 125°C
j
j


60
80
100
0.01
10
1.0
0.1
10
1
100
1
0.4
Fig. 2 Typ Forward Characteristics (per element)
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
Pulse Width = 300µs
F
2% duty cycle
120
T = 25°C
j
0.6
V , REVERSE VOLTAGE (V)
140
R
0.8
MBMB

10
1.0
V
sig
f = 1.0 Mhz
T = 25°c
= 50 mV p-p
j
1.2
100
1.4