BDW93C_NL Fairchild Semiconductor, BDW93C_NL Datasheet

BDW93C_NL

Manufacturer Part Number
BDW93C_NL
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BDW93C_NL

Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
100V
Collector Current (dc) (max)
12A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / Rohs Status
Compliant
©2000 Fairchild Semiconductor International
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94, BDW94A, BDW94B and BDW94C respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Thermal Characteristics
R
V
V
I
I
I
P
T
T
Symbol
C
CP
B
J
STG
CBO
CEO
C
Symbol
jc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Thermal Resistance
T
C
C
=25 C unless otherwise noted
=25 C)
: BDW93
: BDW93A
: BDW93B
: BDW93C
: BDW93
: BDW93A
: BDW93B
: BDW93C
Parameter
T
BDW93/A/B/C
C
=25 C unless otherwise noted
Parameter
Junction to Case
1.Base
1
- 65 ~ 150
2.Collector
Value
100
100
150
0.2
45
60
80
45
60
80
12
15
80
TO-220
Value
1.5
3.Emitter
Rev. A, February 2000
Units
Units
W
C/W
V
V
V
V
V
V
V
V
A
A
A
C
C

Related parts for BDW93C_NL

BDW93C_NL Summary of contents

Page 1

... Current (Pulse Base Current B P Collector Dissipation ( Junction Temperature J T Storage Temperature STG Thermal Characteristics Symbol R Thermal Resistance jc ©2000 Fairchild Semiconductor International BDW93/A/B/C T =25 C unless otherwise noted C Parameter : BDW93 : BDW93A : BDW93B : BDW93C : BDW93 : BDW93A : BDW93B : BDW93C = =25 C unless otherwise noted C ...

Page 2

... EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage Parallel Diode Forward Voltage F * Pulse Test: PW=300 s, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International T =25 C unless otherwise noted C Test Condition : BDW93 I = 100mA BDW93A : BDW93B : BDW93C : BDW93 V = 45V, I ...

Page 3

... V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 100 I MAX BDW93 BDW93A BDW93B BDW93C 0 [V], COLLECTOR EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 0.1 10 100 0.1 Figure 2. Collector-Emitter Saturation Voltage 1000 100 10 3.2 4.0 1 Figure 4. Collector Output Capacitance 100 80 100 us ...

Page 4

... Package Demensions 1.27 2.54TYP [2.54 ©2000 Fairchild Semiconductor International TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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