MT29F8G08ABABAWP-IT:B Micron Technology Inc, MT29F8G08ABABAWP-IT:B Datasheet - Page 78

• Manufacturer Part Number: MT29F8G08ABABAWP-IT:B
• Description: MICMT29F8G08ABABAWP-IT:B 8GB ASYNCHRONOU
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP-IT:B

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

COPYBACK Operations
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
COPYBACK operations make it possible to transfer data within a plane from one page to
another using the cache register. This is particularly useful for block management and
wear-leveling.
The COPYBACK operation is a two-step process consisting of a COPYBACK READ (00h-
35h) and a COPYBACK PROGRAM (85h-10h) command. To move data from one page to
another on the same plane, first issue the COPYBACK READ (00h-35h) command. When
the LUN is ready (RDY = 1, ARDY = 1), the host can transfer the data to a new page by
issuing the COPYBACK PROGRAM (85h-10h) command. When the LUN is again ready
(RDY = 1, ARDY = 1), the host should check the FAIL bit to verify that this operation
completed successfully.
To prevent bit errors from accumulating over multiple COPYBACK operations, it is
recommended that the host read the data out of the cache register after the COPYBACK
READ (00h-35h) completes, prior to issuing the COPYBACK PROGRAM (85h-10h)
command. The CHANGE READ COLUMN (05h-E0h) command can be used to change
the column address. The host should check the data for ECC errors and correct them.
When the COPYBACK PROGRAM (85h-10h) command is issued, any corrected data can
be input. The CHANGE WRITE COLUMN (85h) command can be used to change the
column address.
It is not possible to use the COPYBACK operation to move data from one plane to
another or from one LUN to another. This is accomplished using a READ PAGE (00h-
30h) or COPYBACK READ (00h-35h) command, reading the data out of the NAND, and
then using a PROGRAM PAGE or COPYBACK PROGRAM (85h-10h) command with data
input to program the data to a new plane or LUN.
Between the COPYBACK READ (00h-35h) and COPYBACK PROGRAM (85h-10h)
commands, the following commands are supported: status operations (70h, 78h), and
column address operations (05h-E0h, 06h-E0h, 85h). RESET operations (FFh, FCh) can
be issued after COPYBACK READ (00h-35h), but the contents of the cache registers on
the target are not valid.
In devices that have more than one LUN per target, after COPYBACK READ (00h-35h) is
issued, multi-LUN operations are prohibited until after the COPYBACK PROGRAM (85h-
10h) command is issued.
MULTI-PLANE COPYBACK Operations
MULTI-PLANE COPYBACK READ operations improve read data throughput by copying
data simultaneously from more than one plane to the specified cache registers. This is
done by prepending one or more READ PAGE MULTI-PLANE (00h-32h) commands in
front of the COPYBACK READ (00h-35h) command.
The COPYBACK PROGRAM MULTI-PLANE (85h-11h) command can be used to improve
system performance of COPYBACK PROGRAM operations by enabling movement of
multiple pages from the cache registers to different planes of the NAND Flash array. This
is done by prepending one or more COPYBACK PROGRAM (85h-11h) commands in
front of the COPYBACK PROGRAM (85h-10h) command.
See “Multi-Plane Operations” on page 86 for details.
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8Gb Asychronous/Synchronous NAND Flash Memory
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Command Definitions
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