RMB4S/45 Vishay, RMB4S/45 Datasheet - Page 3

• Manufacturer Part Number: RMB4S/45
• Manufacturer: Vishay

Specifications of RMB4S/45

• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 400V
• Rms Voltage (max): 280V
• Peak Non-repetitive Surge Current (max): 30A
• Avg. Forward Curr (max): 0.8@Ta=30CA
• Rev Curr: 5uA
• Forward Voltage: 1.25V
• Package Type: TO-269AA
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Not Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88705
Revision: 01-Feb-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
0.161 (4.10)
40
= 125 °C
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0.9
T
0.029 (0.74)
0.017 (0.43)
J
60
= 25 °C
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
RMB2S & RMB4S
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3