MT48H32M16LFBF-75:B Micron Technology Inc, MT48H32M16LFBF-75:B Datasheet - Page 59

• Manufacturer Part Number: MT48H32M16LFBF-75:B
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75:B

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 30: WRITE-to-PRECHARGE
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST TER-
MINATE command is ignored. The last data written (provided that DQM is LOW at that
time) will be the input data applied one clock previous to the BURST TERMINATE com-
mand. This is shown in Figure 31 (page 60), where data n is the last desired data
element of a longer burst.
t
t
Command
Command
WR @
WR @
1. In this example DQM could remain LOW if the WRITE burst is a fixed length of two.
Address
Address
DQM
DQM
CLK
t
t
DQ
DQ
CK
CK < 15ns
15ns
WRITE
Bank a,
WRITE
Bank a,
Col n
D
Col n
D
T0
IN
IN
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
NOP
NOP
D
D
T1
IN
IN
t
WR
59
PRECHARGE
(a or all)
Bank
NOP
T2
t
WR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
PRECHARGE
(a or all)
Bank
T3
NOP
t RP
NOP
NOP
T4
t RP
ACTIVE
Bank a,
NOP
Row
T5
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
Bank a,
Don’t Care
ACTIVE
NOP
Row
T6