GBU8M-E3/22 Vishay, GBU8M-E3/22 Datasheet - Page 3
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GBU8M-E3/22
Manufacturer Part Number
GBU8M-E3/22
Description
Manufacturer
Vishay
Datasheet
1.GBU8M-E322.pdf
(4 pages)
Specifications of GBU8M-E3/22
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
1kV
Rms Voltage (max)
700V
Peak Non-repetitive Surge Current (max)
200A
Avg. Forward Curr (max)
8A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBU
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88616
Revision: 15-Dec-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 150 °C
0.6
50 - 400 V
600 - 1000 V
Instantaneous Forward Voltage (V)
20
T
J
= 125 °C
0.8
40
T
0.020 R (TYP.)
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.100 (2.54)
0.085 (2.16)
= 25 °C
0.310 (7.9)
0.290 (7.4)
0.065 (1.65)
0.085 (2.16)
For technical questions within your region, please contact one of the following:
1.0
T
Pulse Width = 300 µs
1 % Duty Cycle
60
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead by beveled corner
J
= 25 °C
1.2
80
1.4
0.880 (22.3)
0.860 (21.8)
0.190 (4.83)
0.210 (5.33)
100
1.6
0.160 (4.1)
0.140 (3.5)
(1.9) R
0.075
.
Case Type GBU
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.060 (1.52)
0.080 (2.03)
Chamfer
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
0.740 (18.8)
0.720 (18.3)
10
10
0.710 (18.0)
0.690 (17.5)
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
50 - 400 V
600 - 1000 V
0.140 (3.56)
0.130 (3.30)
0.1
GBU8A thru GBU8M
Reverse Voltage (V)
t - Heating Time (s)
1
0.026 (0.66)
0.020 (0.51)
0.085 (2.16)
0.075 (1.90)
9° TYP.
5° TYP.
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3