BF245C ON Semiconductor, BF245C Datasheet - Page 2
BF245C
Manufacturer Part Number
BF245C
Description
Manufacturer
ON Semiconductor
Datasheet
1.BF245C.pdf
(8 pages)
Specifications of BF245C
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
30V
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / Rohs Status
Not Compliant
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Manufacturer
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3. The frequency at which g fs is 0.7 of its value at 1 kHz.
ELECTRICAL CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Output Admittance
Forward Transfer Admittance
Reverse Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Cut–off Frequency (3)
Figure 3. Forward Transadmittance (y fs )
Figure 1. Input Admittance (y is )
Characteristic
(V DS = 20 Vdc, –V GS = 1.0 Vdc, f = 1.0 MHz)
(V DS = 20 Vdc, –V GS = 1.0 Vdc, f = 1.0 MHz)
(T A = 25 C unless otherwise noted) (Continued)
COMMON SOURCE CHARACTERISTICS
(V DS = 15 Vdc, V GS = 0, f = 200 MHz)
(V DS = 15 Vdc, V GS = 0, f = 200 MHz)
(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)
(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)
(V DS = 20 Vdc, –V GS = 1.0 Vdc)
(V DS = 15 Vdc, T channel = 25 C)
ADMITTANCE PARAMETERS
BF245A BF245B
(V DS = 15 Vdc, V GS = 0)
http://onsemi.com
2
Figure 2. Reverse Transfer Admittance (y rs )
Symbol
Figure 4. Output Admittance (y os )
F (Yfs)
C oss
C rss
C iss
Y os
Y fs
Y fs
Y rs
Min
3.0
—
—
—
—
—
—
—
Typ
700
5.6
1.0
3.0
0.7
0.9
—
40
Max
6.5
—
—
—
—
—
—
—
mmhos
mmhos
mmhos
mmhos
MHz
Unit
pF
pF
pF