DXT2222A-13 Diodes Zetex, DXT2222A-13 Datasheet - Page 2

• Manufacturer Part Number: DXT2222A-13
• Description: Trans GP BJT NPN 40V 0.6A 4-Pin (3+Tab) SOT-89 T/R
• Manufacturer: Diodes Zetex
• Type: NPNr

Specifications of DXT2222A-13

• Package: 4SOT-89
• Supplier Package: SOT-89
• Pin Count: 4
• Minimum Dc Current Gain: 35@100uA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V
• Maximum Operating Frequency: 300(Min) MHz
• Maximum Dc Collector Current: 0.6 A
• Maximum Base Emitter Saturation Voltage: 1.2@15mA@150mA|2@50mA@500mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@15mA@150mA|1@50mA@500mA V
• Maximum Collector Base Voltage: 75 V
• Maximum Collector Emitter Voltage: 40 V
• Maximum Emitter Base Voltage: 6 V

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS31156 Rev. 3 - 2
4.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
R
θJA
= 125°C/W
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
www.diodes.com
BE(SAT)
I
I
C
I
C
h
CBO
CEX
EBO
NF
I
BL
f
t
t
obo
t
t
FE
ibo
T
d
s
r
f
2 of 4
Min
100
300
6.0
0.6
75
40
35
50
75
40
35
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
300
225
0.3
1.0
1.2
2.0
4.0
V , COLLECTOR EMITTER VOLTAGE (V)
10
10
10
20
25
10
25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
CE
Unit
MHz
nA
μA
nA
nA
nA
dB
pF
pF
ns
ns
ns
ns
⎯
V
V
V
V
V
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
R
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
I
B1
CB
CB
CE
EB
CE
CB
EB
CE
CE
CC
EB(off)
CC
S
= 10μA, I
= 10mA, I
= 10μA, I
= 100μA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 10mA, V
= 150mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 1.0kΩ, f = 1.0kHz
= I
= 3.0V, I
= 0.5V, f = 1.0MHz, I
= 60V, I
= 60V, I
= 60V, V
= 60V, V
= 10V, f = 1.0MHz, I
= 20V, I
= 10V, I
= 30V, I
= 30V, I
B2
= 0.5V, I
= 15mA
Test Conditions
C
E
B
E
E
C
C
C
C
C
CE
CE
EB(OFF)
EB(OFF)
= 0
= 0
B
B
B
B
CE
CE
= 0
= 0
= 0, T
CE
CE
CE
= 20mA, f = 100MHz
= 150μA,
= 150mA,
= 150mA,
= 0
= 15mA
= 50mA
= 15mA
= 50mA
B1
= 10V
= 10V, T
= 10V
= 10V
= 10V
= 10V
= 1.0V
= 15mA
A
= 3.0V
= 3.0V
© Diodes Incorporated
= 150°C
A
E
C
= 0
= -55°C
DXT2222A
= 0