MT18JSF51272PZ-1G4D1 Micron Technology Inc, MT18JSF51272PZ-1G4D1 Datasheet - Page 14

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MT18JSF51272PZ-1G4D1

Manufacturer Part Number
MT18JSF51272PZ-1G4D1
Description
MICMT18JSF51272PZ-1G4D1 4GB DDR3 MODULE
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18JSF51272PZ-1G4D1

Memory Type
DDR3 SDRAM
Memory Size
4GB
Speed
1333MT/s
Features
-
Package / Case
240-RDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 12: DDR3 I
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet
PDF: 09005aef8394fb39
js-z-f18c256_512x72pz.pdf - Rev. E 9/10 EN
Parameter
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled):
MAX T
All banks interleaved read current
Reset current
C
= 95°C
DD
Specifications and Conditions – 4GB
C
= 85°C
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM RDIMM
Symbol
I
I
I
I
I
I
I
I
DD2NT
I
I
I
DD2P0
DD2P1
DD6ET
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
I
DD3P
DD4R
DD5B
14
DD0
DD1
DD6
DD7
DD8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1600
1710
1890
2970
3060
3870
7830
216
630
720
756
900
720
810
216
270
252
1333
1530
1800
2610
2790
3600
6930
216
540
630
666
810
630
720
216
270
252
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
1066
1350
1710
2250
2430
3420
6030
216
450
540
576
720
540
630
216
270
252
Specifications
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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