EPM570GT100C5N Altera, EPM570GT100C5N Datasheet - Page 10
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EPM570GT100C5N
Manufacturer Part Number
EPM570GT100C5N
Description
IC MAX II CPLD 570 LE 100-TQFP
Manufacturer
Altera
Series
MAX® IIr
Specifications of EPM570GT100C5N
Programmable Type
In System Programmable
Delay Time Tpd(1) Max
5.4ns
Voltage Supply - Internal
1.71 V ~ 1.89 V
Number Of Logic Elements/blocks
570
Number Of Macrocells
440
Number Of I /o
76
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
100-TQFP, 100-VQFP
Voltage
1.8V
Memory Type
FLASH
Number Of Logic Elements/cells
570
Family Name
MAX II
# Macrocells
440
Frequency (max)
1.8797GHz
Propagation Delay Time
8.7ns
Number Of Logic Blocks/elements
57
# I/os (max)
76
Operating Supply Voltage (typ)
1.8V
In System Programmable
Yes
Operating Supply Voltage (min)
1.71V
Operating Supply Voltage (max)
1.89V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Package Type
TQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Compliant
Other names
544-1405
EPM570GT100C5N
EPM570GT100C5N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EPM570GT100C5N
Manufacturer:
INTEL
Quantity:
1 235
2–2
Figure 2–1. MAX II Device Block Diagram
MAX II Device Handbook
f
MultiTrack
Interconnect
IOE
IOE
IOE
IOE
Figure 2–1
Each MAX II device contains a flash memory block within its floorplan. On the
EPM240 device, this block is located on the left side of the device. On the EPM570,
EPM1270, and EPM2210 devices, the flash memory block is located on the bottom-left
area of the device. The majority of this flash memory storage is partitioned as the
dedicated configuration flash memory (CFM) block. The CFM block provides the non-
volatile storage for all of the SRAM configuration information. The CFM
automatically downloads and configures the logic and I/O at power-up, providing
instant-on operation.
For more information about configuration upon power-up, refer to the
and Power-On Reset in MAX II Devices
A portion of the flash memory within the MAX II device is partitioned into a small
block for user data. This user flash memory (UFM) block provides 8,192 bits of
general-purpose user storage. The UFM provides programmable port connections to
the logic array for reading and writing. There are three LAB rows adjacent to this
block, with column numbers varying by device.
Table 2–1
number of LAB rows and columns adjacent to the flash memory area in the EPM570,
EPM1270, and EPM2210 devices. The long LAB rows are full LAB rows that extend
from one side of row I/O blocks to the other. The short LAB rows are adjacent to the
UFM block; their length is shown as width in LAB columns.
IOE
shows the number of LAB rows and columns in each device, as well as the
shows a functional block diagram of the MAX II device.
Element
Element
Element
Element
Logic
Logic
Logic
Logic
IOE
Interconnect
MultiTrack
IOE
Element
Element
Element
Element
Logic
Logic
Logic
Logic
IOE
chapter in the MAX II Device Handbook.
IOE
Element
Element
Element
Element
Logic
Logic
Logic
Logic
IOE
© October 2008 Altera Corporation
Chapter 2: MAX II Architecture
Logic Array
BLock (LAB)
Functional Description
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