XC6VCX195T-2FFG1156I Xilinx Inc, XC6VCX195T-2FFG1156I Datasheet - Page 12

• Manufacturer Part Number: XC6VCX195T-2FFG1156I
• Description: IC FPGA VIRTEX 6 199K 1156FFGBGA
• Manufacturer: Xilinx Inc
• Series: Virtex™ 6 CXTr

Specifications of XC6VCX195T-2FFG1156I

• Number Of Logic Elements/cells: 199680
• Number Of Labs/clbs: 15600
• Total Ram Bits: 12681216
• Number Of I /o: 600
• Voltage - Supply: 0.95 V ~ 1.05 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 1156-BBGA, FCBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Gates: -

Table 10: Recommended Operating Conditions
Table 11: DC Characteristics Over Recommended Operating Conditions
DS153 (v1.6) February 11, 2011
Product Specification
Notes:
1.
2.
3.
4.
5.
6.
7.
Notes:
1.
2.
3.
V
V
V
V
I
V
V
V
V
I
I
C
I
I
I
n
r
IN
REF
L
RPU
RPD
BATT
Symbol
CCINT
CCAUX
CCO
IN
BATT
FS
DRINT
DRI
Symbol
IN
(4)
(3)
(6)
Configuration data is retained even if V
Includes V
The configuration supply voltage V
A total of 100 mA per bank should not be exceeded.
V
When not programming eFUSE, connect V
All voltages are relative to ground.
Typical values are specified at nominal voltage, 25°C.
Maximum value specified for worst case process at 25°C.
This measurement represents the die capacitance at the pad, not including the package.
BATT
(1)(2)(3)
(5)
is required only when using bitstream encryption. If battery is not used, connect V
Data retention V
Data retention V
V
Input or output leakage current per pin (sample-tested)
Die input capacitance at the pad
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-down (when selected) @ V
Battery supply current
Temperature diode ideality factor
Series resistance
REF
Internal supply voltage relative to GND, T
Internal supply voltage relative to GND, T
Auxiliary supply voltage relative to GND, T
Auxiliary supply voltage relative to GND, T
Supply voltage relative to GND, T
Supply voltage relative to GND, T
2.5V supply voltage relative to GND, T
2.5V supply voltage relative to GND, T
2.5V and below supply voltage relative to GND, T
2.5V and below supply voltage relative to GND, T
Maximum current through any pin in a powered or unpowered bank when forward
biasing the clamp diode.
Battery voltage relative to GND, T
Battery voltage relative to GND, T
External voltage supply for eFUSE programming
CCO
leakage current per pin
of 1.2V, 1.5V, 1.8V, and 2.5V.
CCINT
CCAUX
voltage (below which configuration data might be lost)
voltage (below which configuration data might be lost)
CC_CONFIG
CCO
FS
IN
IN
IN
IN
drops to 0V.
j
j
= 0V, V
= 0V, V
= 0V, V
= 0V, V
j
j
to GND.
is also known as V
IN
= 0C to +85C
= –40C to +100C
= 0C to +85C
= –40C to +100C
Description
Description
= 2.5V
j
j
= 0C to +85C
= –40C to +100C
CCO
CCO
CCO
CCO
j
j
j
j
= 0C to +85C
= –40C to +100C
= 0C to +85C
= –40C to +100C
= 2.5V
= 1.8V
= 1.5V
= 1.2V
www.xilinx.com
j
j
= 0C to +85C
= –40C to +100C
CCO_0
.
(1)(2)
BATT
to either ground or V
Virtex-6 CXT Family Data Sheet
GND – 0.20
GND – 0.20
GND – 0.20
GND – 0.20
0.75
Min
2.0
20
–
–
–
8
5
1
3
–
–
–
2.375
2.375
2.375
0.95
0.95
1.14
1.14
Min
1.0
1.0
–
1.0002
Typ
CCAUX
–
–
–
–
–
–
–
–
–
–
–
5
V
V
CCO
CCO
2.625
2.625
2.625
2.625
2.625
2.625
2.625
.
Max
1.05
1.05
2.5
2.5
10
Max
 0.2
 0.2
150
10
10
80
40
30
20
80
–
–
8
–
–
Units
Units
mA
µA
µA
µA
µA
µA
µA
µA
nA
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

n
12