L6743B STMicroelectronics, L6743B Datasheet - Page 11

• Manufacturer Part Number: L6743B
• Description: MOSFET & Power Driver ICs Hi-current MOSFET Driver
• Manufacturer: STMicroelectronics
• Type: High Current Mosfet Driverr

Specifications of L6743B

• Product: Driver ICs - Various
• Propagation Delay Time: 75 ns
• Supply Voltage (max): 12 V
• Supply Voltage (min): 5 V
• Supply Current: 5 mA
• Maximum Power Dissipation: 2.25 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Voltage: 10 V
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

L6743B
5.5
Layout guidelines
L6743B provides driving capability to implement high-current step-down DC-DC converters.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (also EMI and losses) power connections must be a part
of a power plane and anyway realized by wide and thick copper traces: loop must be anyway
minimized. The critical components, such as the power MOSFETs, must be close one to the
other. However, some space between the power MOSFET is still required to assure good
thermal cooling and airflow.
Traces between the driver and the MOSFETS should be short and wide to minimize the
inductance of the trace so minimizing ringing in the driving signals. Moreover, VIAs count
needs to be minimized to reduce the related parasitic effect.
The use of multi-layer printed circuit board is recommended.
Small signal components and connections to critical nodes of the application as well as
bypass capacitors for the device supply are also important. Locate the bypass capacitor
(VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop and
use wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel to the low-side MOSFET might show big
negative spikes on the phase pin. This spike can be limited as well as the positive spike but
has an additional consequence: it causes the bootstrap capacitor to be over-charged. This
extra-charge can cause, in the worst case condition of maximum input voltage and during
particular transients, that boot-to-phase voltage overcomes the abs.max.ratings also
causing device failures. It is then suggested in this cases to limit this extra-charge by adding
a small resistor R
the limitation of the spike present on the BOOT pin.
For heat dissipation, place copper area under the IC. This copper area may be connected
with internal copper layers through several VIAs to improve the thermal conductivity. The
combination of copper pad, copper plane and VIAs under the driver allows the device to
reach its best thermal performances.
Figure 7.
LS DRIVER
LGATE
C
GND
VCC
BOOT
R
BOOT
Driver turn-on and turn-off paths
BOOT
R
GATE
in series to the boot capacitor. The use of R
LS MOSFET
R
INT
C
GS
C
GD
C
DS
HS DRIVER
Device description and operation
HGATE
PHASE
BOOT
C
VCC
BOOT
R
BOOT
BOOT
R
GATE
also contributes in
HS MOSFET
R
INT
C
GS
C
GD
11/16
C
DS