DS1220Y-100+ Dallas Semiconductor, DS1220Y-100+ Datasheet - Page 3

• Manufacturer Part Number: DS1220Y-100+
• Description: SRAM, Nonvolatile, 2Kx8, 100 nS, DIP24
• Manufacturer: Dallas Semiconductor

Specifications of DS1220Y-100+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 75 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 16K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 2K×8
• Package Type: 720 EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 100 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Hazardous Materials

AC ELECTRICAL CHARACTERISTICS
Read Cycle Time
Access Time
Valid
Valid
Output Active
Output High-Z
from Deslection
Output Hold from
Address Change
Write Cycle Time
Write Pulse Width
Address Setup
Time
Write Recovery
Time
Output High-Z
from WE
Output Active
from WE
Data Setup Time
Data Hold Time
OE to Output
CE to Output
OE or CE to
PARAMETER
SYM
t
t
t
t
t
t
t
t
t
ODW
t
t
OEW
ACC
t
t
t
WR1
WR2
t
t
COE
t
DH1
DH2
WC
AW
WP
RC
OE
CO
OD
OH
DS
MIN
DS1220Y-100
100
100
75
10
40
10
5
5
0
0
5
0
MAX
100
100
50
35
35
DS1220Y-120
MIN
120
120
90
10
50
10
5
5
0
0
5
0
MAX
120
120
60
35
35
4 of 9
MIN
150
150
100
DS1220Y-150
10
60
10
5
5
0
0
5
0
(T
A
: See Note 10; V
MAX
150
150
70
35
35
MIN
200
200
150
DS1220Y-200
10
80
10
5
5
0
0
5
0
MAX
200
100
200
35
35
CC
=5.0V ± 10%)
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
12
13
12
13
5
5
3
5
5
4