NTE2396 NTE Electronics, Inc., NTE2396 Datasheet - Page 3

• Manufacturer Part Number: NTE2396
• Description: MOSFET; N-Ch; VDSS 100V; RDS(ON) 0.077Ohm; ID 28A; TO-220; PD 150W; VGS +/-20V; Qg 69nC
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2396

• Application: High speed switch
• Channel Type: N-Channel
• Current, Drain: 28 A
• Fall Time: 48 ns (Typ.)
• Gate Charge, Total: 69 nC
• Operating And Storage Temperature: -55 to +175 °C
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.077 Ohm
• Resistance, Thermal, Junction To Case: 1 °C⁄W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Thermal Resistance, Junction To Ambient: 62 °C⁄W
• Time, Rise: 77 ns (Typ.)
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 5.8 Mhos
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 2.5 V
• Voltage, Gate To Source: ±20 V

.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
.420 (10.67)
Max
.250 (6.35)
Max
Drain/Tab
Source
(12.7)
(12.7)
.110 (2.79)
.500
Max
.500
Min