NTE199 NTE Electronics, Inc., NTE199 Datasheet - Page 2

• Manufacturer Part Number: NTE199
• Description: Transistor; TO-92; NPN; 50; 70; 5 V; 100 mA; 260 mW; -55 to 125 degC; 50 V; 70
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, High Gainr

Specifications of NTE199

• Complement To: PNP
• Current, Collector: 100 mA
• Current, Collector Cutoff: 30 nA (Max.)
• Current, Continuous Collector: 100 mA
• Current, Gain: 400
• Device Dissipation: 0.36 W
• Frequency: 90 MHz
• Material Type: Silicon
• Package Type: TO-92
• Polarity: NPN
• Power Dissipation: 360 mW
• Primary Type: Si
• Temperature Range, Junction, Operating: -55 to 125 °C
• Transistor Polarity: NPN
• Transistor Type: NPN
• Voltage, Breakdown, Collector To Base: 70 V
• Voltage, Breakdown, Collector To Emitter: 50 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 70 V
• Voltage, Collector To Emitter: 50 V
• Voltage, Collector To Emitter, Saturation: 0.125 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 2. Typically, a minimum of 95% of the distribution is above this value.
Note 3. Pulse Test: Pulse Width
Static Characteristics (Cont’d)
Forward Current Transfer Ratio
Breakdown Voltage
Breakdown Voltage
Breakdown Voltage
Collector Saturation Voltage
Base Saturation Voltage
Base Emitter ON Voltage
Dynamic Characteristics
Forward Current Transfer Ratio
Output Capacitance,
Noise Figure
Collector–to–Emitter
Collector–to–Base
Emitter–to–Base
Common Base
Parameter
.105 (2.67) Max
.205 (5.2) Max
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
.100 (2.54)
CE(sat)
BE(sat)
BE(on)
h
C
300 s, Duty Cycle
NF
h
(5.33)
(12.7)
FE
.210
.500
fe
cb
Max
Min
A
= +25 C unless otherwise specified)
V
V
I
I
I
I
I
V
V
V
I
R
C
C
E
C
C
C
CE
CE
CE
CE
CB
g
= 10 A
= 10mA, Note 3
= 10 A
= 10mA, I
= 10mA, I
= 100 A, V
= 5k , f = 1kHz
E C B
= 5V, I
= 5V, I
= 10V, I
= 5V, I
= 10V, I
Test Conditions
C
C
C
B
B
C
E
= 2mA
= 100 A, Note 2
= 2mA, f = 1kHz
.050 (1.27)
CE
= 0, f = 1kHz
= 1mA, Note 3
= 1mA, Note 3
= 2mA
2%
.135 (3.45) Min
.165
(4.2)
Max
.105 (2.67) Max
= 5V,
Seating Plane
.021 (.445) Dia Max
Min
400
400
0.5
50
70
–
5
–
–
–
–
Typ
300
–
–
–
–
–
–
–
–
–
–
0.125
1200
Max
0.78
800
0.9
–
–
–
–
4
3
Unit
pF
dB
V
V
V
V
V
V