NTE129 NTE Electronics, Inc., NTE129 Datasheet - Page 3

• Manufacturer Part Number: NTE129
• Description: Transistor; PNP; TO-39; 80 V (Max.); 80 V (Max.); 5 V (Max.); 1 A (Max.); 25
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, Driver, Switchr

Specifications of NTE129

• Complement To: NPN
• Current, Collector: 1 A
• Current, Collector Cutoff: 50 nA
• Current, Continuous Collector: 1 A
• Current, Emitter Cutoff: 10 μA
• Current, Gain: 25
• Device Dissipation: 1.25 W
• Frequency: 100 to 400 MHz
• Gain, Dc Current, Minimum: 25
• Material Type: Silicon
• Package Type: TO-39
• Polarity: PNP
• Power Dissipation: 1.25 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 20 °C/W
• Temperature Range, Junction, Operating: -65 to +200 °C
• Transistor Polarity: PNP
• Transistor Type: PNP
• Voltage, Base To Emitter: 5 V
• Voltage, Breakdown, Collector To Base: 80 V
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 0.15 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): T
Small–Signal Characteristics
Current–Gain – Bandwidth Product
Output Capacitance
Input Capacitance
Small–Signal Current Gain
Collector–Base Time Constant
Noise Figure (NTE128 Only)
Switching Characteristics (NTE129 Only)
Storage Time
Turn–On Time
Fall Time
NTE129
NTE129
NTE129
(NTE128 Only)
NTE128
NTE128
NTE128
(NTE128 Only)
Parameter
Emitter
Symbol
rb C
C
C
NF
h
t
(12.7)
f
t
on
(6.6)
obo
t
.260
.500
Max
T
ibo
Min
s
fe
f
c
A
45
= +25 C unless otherwise specified)
I
V
V
V
V
I
I
I
I
f = 1kHz
I
I
I
C
C
C
E
C
C
C
C
CB
CE
BE
EB
= 10mA, V
= 50mA, V
= 1mA, V
= 50mA, V
= 100 A, V
= 500mA, I
= 500mA, I
= 500mA, I
.031 (.793)
= 10V, I
= 10V, f = 1MHz
= 500mV, I
= 500mV, f = 1MHz
Test Conditions
CE
E
CE
CE
CB
B1
B1
B1
CE
= 0, f = 1MHz
.018 (0.45)
= 5V, f = 1kHz
C
= 10V, f = 20MHz
= 10V, f = 100MHz
= 10V, f = 79.8MHz
= I
= 50mA
= I
= 10V, R
Base
Collector/Case
= 0, f = 1MHz
.370 (9.39) Dia Max
.355 (9.03) Dia Max
B2
B2
= 50mA
= 50mA
S
= 1k ,
Min
100
80
–
–
–
–
1
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
Max
400
400
400
350
100
110
12
20
60
50
4
4
Unit
MHz
pF
pF
pF
pF
dB
ps
ns
ns
ns