IRF840APBF Vishay PCS, IRF840APBF Datasheet - Page 2

• Manufacturer Part Number: IRF840APBF
• Description: MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.85Ohm; ID 8A; TO-220AB; PD 125W; VGS +/-30V
• Manufacturer: Vishay PCS

Specifications of IRF840APBF

• Current, Drain: 8 A
• Gate Charge, Total: 38 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 0.85 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 26 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 3.7 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 2 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Dynamic @ T
Static @ T
E
I
E
R
R
R
R
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
V
∆V
V
I
I
AR
S
on
DSS
GSS
d(on)
d(off)
f
SM
r
rr
AS
AR
fs
θJC
θCS
θJA
DS(on)
SD
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
Parameter
Parameter
Parameter
–––
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
3.7
2.0
–––
–––
–––
–––
––– 2.16 3.24
Intrinsic turn-on time is negligible (turn-on is dominated by L
1018 –––
1490 –––
0.58
–––
–––
–––
–––
–––
–––
–––
155
–––
–––
–––
422
––– 0.85
–––
–––
––– -100
8.0
11
23
26
19
42
56
–––
633
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
2.0
4.0
9.0
8.0
38
18
25
32
–––
µC
nC
ns
pF
µA
nA
ns
V/°C
Ω
S
V
V
V
Typ.
Typ.
0.50
–––
–––
–––
–––
ƒ = 1.0MHz, See Fig. 5
V
V
I
V
V
V
I
R
R
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
V
V
V
V
D
D
J
J
GS
Reference to 25°C, I
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 8.0A
= 8.0A
= 25°C, I
= 25°C, I
= 9.1Ω
= 31Ω,See Fig. 10
= 50V, I
= 400V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 10V, See Fig. 6 and 13 „
= 250V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
= 250µA
Conditions
= 8.0A, V
= 8.0A
Conditions
Conditions
= 250µA
= 4.8A
= 4.8A „
GS
GS
= 0V to 400V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
510
–––
8.0
1.0
13
62
= 0V
= 0V, T
D
GS
= 1mA
„
J
G
= 0V „
= 125°C
Units
Units
°C/W
S
mJ
mJ
+L
A
D
S
D
)
2