NTE261 NTE Electronics, Inc., NTE261 Datasheet
NTE261
Manufacturer Part Number
NTE261
Description
Transistor; TO220; NPN; 100; 100; 5 V; 5 A; 65 W; -65 to 150 degC; 62.5 degC/W
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE261.pdf
(2 pages)
Specifications of NTE261
Current, Collector Cutoff
0.5 mA (Max.)
Current, Continuous Collector
5 A
Current, Gain
1000
Current, Input
120 mA
Current, Output
5 A
Device Dissipation
65 W
Gain, Dc Current, Minimum
1000
Package Type
TO-220
Polarity
NPN
Power Dissipation
65 W
Primary Type
Si
Resistance, Thermal, Junction To Ambient
62.5
Resistance, Thermal, Junction To Case
1.92 °C⁄W
Temperature Range, Junction, Operating
-65 to +150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100
Voltage, Collector To Emitter
100
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
100 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Collector–Emitter Sustaining Voltage: V
D Low Collector–Emitter Saturation Voltage:
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Unclamped Inductive Load Energy (Note 1), E
Operating Junction Temperature range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. I
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
C
V
= 1A, L = 100mH, P.R.F. = 10Hz, V
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 2V Max @ I
= 4V Max @ I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
A
CB
C
NTE261 (NPN) & NTE262 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
= 2500 Typ @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 5A
D
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
thJA
CC
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 4A
= 20V, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min @ 100mA
BE
= 100 .
–65 to +150 C
–65 to +150 C
0.016W/ C
0.52W/ C
1.92 C/W
62.5 C/W
120mA
50mJ
100V
100V
65W
2W
5V
5A
8A
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NTE261 Summary of contents
Page 1
... NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain Collector–Emitter Sustaining Voltage Low Collector– ...
Page 2
... Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Output Capacitance NTE261 NTE262 Note 2. Pulse Test: Pulse Width NTE261 B NTE262 B = +25 C unless otherwise specified) C Symbol Test Conditions 100mA, I CEO(sus) ...