TP0610KL-TR1-E3 Siliconix / Vishay, TP0610KL-TR1-E3 Datasheet - Page 4

• Manufacturer Part Number: TP0610KL-TR1-E3
• Description: MOSFET, P-Channel, -60 V, -185 mA, 6 Ohms, TO-226AA (TO-92)
• Manufacturer: Siliconix / Vishay

Specifications of TP0610KL-TR1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TP0610K
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package
Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71411.
www.vishay.com
4
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
−0.0
−0.1
−0.2
−0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.00
−50
Threshold Voltage Variance Over Temperature
0.01
0.1
2
1
V
10
−25
Source-Drain Diode Forward Voltage
GS
T
−4
J
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
= 0 V
V
= 125_C
0.3
SD
T
J
0
I
− Source-to-Drain Voltage (V)
D
− Junction Temperature (_C)
= 250 mA
25
0.6
10
Single Pulse
−3
50
T
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
75
T
= −55_C
J
= 25_C
100
1.2
10
−2
125
1.5
150
Square Wave Pulse Duration (sec)
10
−1
2.5
1.5
0.5
10
1
8
6
4
2
0
3
2
1
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
0.1
2
V
GS
I
10
D
− Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
= 200 mA
DM
JM
Time (sec)
4
1
− T
t
1
A
= P
t
T
2
A
DM
= 25_C
Z
S-50129—Rev. D, 24-Jan-05
6
thJA
thJA
100
10
Document Number: 71411
t
t
1
2
(t)
I
= 350_C/W
D
= 500 mA
8
100
600
10
600