NTE5671 NTE Electronics, Inc., NTE5671 Datasheet
NTE5671
Manufacturer Part Number
NTE5671
Description
TRIAC; TO-220; 20 A; 800 V; 0.5 mA (Max.); 16 A @ 67 degC; 55 K/W; 120 degC; 5
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5671.pdf
(3 pages)
Specifications of NTE5671
Channel Type
N
Current, Average Input
20 A
Current, Dc Gate-trigger
35 mA (Min.)
Current, Dc Holding
30 mA (Max.)
Current, Off-state, Peak
0.5 mA (Max.)
Current, On-state, Average, Maximum
20 A
Current, On-state, Rms, Maximum
16 A
Dissipation, Gate-power, Average
5 W
Package Type
TO-220
Temperature, Operating, Maximum
120 °C
Thermal Resistance, Junction To Ambient
55 K⁄W
Voltage, Dc Gate-trigger
1.5 V (Min.)
Voltage, Repetitive Peak Off State
800
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5671 TRIAC is designed for use in applications requiring high bidirectional transient and
blocking voltage capability. Typical applications include AC power control circuits such as lighting, in-
dustrial and domestic heating, motor control and switching systems..
Absolute Maximum Ratings:
Non–Repetitive Peak Off–State Voltage (Either Direction, t
Repetitive Peak Off–State Voltage (Either Direction,
Crest Working Off–State Voltage (Either Direction), V
RMS On–State Current (Conduction Angle 360 , T
Repetitive Peak On–State Current, I
Non–Repetitive Peak On–State Current, I
I
Rate of Rise of On–State Current After Triggering, dI
Average Power Dissipation (Averaged Over any 20ms Period), P
Peak Power Dissipation, P
RMS Isolation Voltage (From All Three Terminals to External Heatsink[Peak]), V
Isolation Capacitance (From T
Full Operating Temperature, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Heatsink (See Mounting Instructions), R
Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1. Mounted on a printed circuit board at any lead length. The quoted value of R
2
t for Fusing (t = 10ms), I
(T
(I
With Heatsink Compound
Without Heatsink Compound
G
used only when no leads of other dissipating components run to the same tie–point.
J
= 200mA to I
= +120 C Prior to Surge, t = 20ms, Full Sine Wave)
T
= 20A, dI
2
t
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
to External Heatsink), C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
dt = 0.2A/ s)
TRIAC – 800V
TRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO220 (Isolated)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
NTE5671
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
H
= +67 C), I
T
RM
DWM
/dt
thJA
(ISO)
0.01), V
, 20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
10ms), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
T(RMS)
DRM
G(AV)
. . . . . . . . . . . . . . . . . . . . .
DSM
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
(ISO)
thJH
–40 to +125 C
thJA
. . . . . .
should be
+120 C
3.5K/W
4.5K/W
30A/ s
55K/W
1000V
95A
800V
800V
400V
140A
140A
0.5W
5.0W
12pF
16A
2
s
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NTE5671 Summary of contents
Page 1
... Description: The NTE5671 TRIAC is designed for use in applications requiring high bidirectional transient and blocking voltage capability. Typical applications include AC power control circuits such as lighting, in- dustrial and domestic heating, motor control and switching systems.. Absolute Maximum Ratings: Non–Repetitive Peak Off–State Voltage (Either Direction, t Repetitive Peak Off– ...
Page 2
Electrical Characteristics: Parameter On–State Voltage (Measured under pulse conditions to prevent excessive dissipation) Rate of Rise of Off–State Voltage (That will not trigger any device) Rate of Change of Commutating Voltage (That will not trigger any device) Off–State Current Gate ...
Page 3
MT 2 .402 (10.2) Max .224 (5.7) Max .295 (7.5) .669 (17.0) Max MT 1 .531 (13.5) Min .100 (2.54) Gate .122 (3.1) Dia .165 (4. Gate .059 (1.5) Max MT 1 .173 (4.4) Max .114 (2.9) Max ...