NTE184 NTE Electronics, Inc., NTE184 Datasheet
NTE184
Manufacturer Part Number
NTE184
Description
Transistor; TO126; NPN; 80; 80; 5 V; 4 A; 40 W; -65 to 150 degC; 3.12 degC/W;
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE184.pdf
(2 pages)
Specifications of NTE184
Complement To
PNP
Current, Collector
4 A
Current, Collector Cutoff
0.1 mA (Max.)
Current, Continuous Collector
4 A
Current, Gain
20 to 80
Device Dissipation
40 W
Frequency
2 MHz
Gain, Dc Current, Minimum
7
Material Type
Silicon
Package Type
TO-126
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.12 °C/W
Temperature Range, Junction, Operating
-65 to 150 °C
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1.4 V
Voltage, Emitter To Base
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE184 (NPN) & NTE185 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Power Amp, Switch
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
Symbol
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
I
CEO
CBO
EBO
CEX
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
CE
CE
CB
BE
= 0.1A, I
= 80V, V
= 80V, I
= 80V, V
= 80V, I
= 5V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
B
B
E
EB(off)
= 0, Note 1
= 0
EB(off)
= 0
= 0
= 1.5V, T
= 1.5V
C
= +150 C
Min
80
–
–
–
–
–
Typ
–65 to +150 C
–65 to +150 C
–
–
–
–
–
–
320mW/ C
Max Unit
1.0
0.1
2.0
0.1
1.0
3.12 C/W
–
40W
mA
mA
mA
mA
mA
80V
80V
V
5V
4A
1A
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NTE184 Summary of contents
Page 1
... NTE184 (NPN) & NTE185 (PNP) Silicon Complementary Transistors Description: The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic package designed for use in power amplifier and switching circuits. Features: D Excellent Safe Area Limits Absolute Maximum Ratings: Collector–Emitter Voltage, V Collector– ...
Page 2
... Dynamic Characteristics Current Gain–Bandwidth Product Note 1. Pulse test: Pulse Width Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (h 10% of each other. Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and NTE185 (PNP). = +25 C unless otherwise specified) C Symbol ...