NTE2321 NTE Electronics, Inc., NTE2321 Datasheet
NTE2321
Manufacturer Part Number
NTE2321
Description
Transistor; DIP; NPN; 30 V; 60 V; 5 V; 500 mA; 0.65 W; -65 to 200 degC
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, Quadr
Datasheet
1.NTE2321.pdf
(2 pages)
Specifications of NTE2321
Current, Collector
500 mA
Current, Collector Cutoff
50 nA
Current, Continuous Collector
500 mA
Current, Gain
30
Device Dissipation
0.65 W
Frequency
350 MHz
Gain, Dc Current, Minimum
30
Package Type
14-Lead DIP
Polarity
NPN
Power Dissipation
1.9 W
Primary Type
Si
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
60 V (Min.)
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
5 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
30 V
Voltage, Collector To Emitter, Saturation
1.6 V
Voltage, Emitter To Base
5 V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Derate Above 25 C
Derate Above 25 C
Parameter
EBO
CBO
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C, Each Transistor), P
= +25 C, Total Device), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quad, General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
I
C
I
CE(sat)
C
h
CBO
EBO
f
obo
FE
ibo
T
J
NTE2321
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
V
I
I
V
Note 1
V
V
C
C
E
C
C
CE
CB
EB
CE
CE
CE
BE
BE
= 10 A, I
= 10mA, I
= 10 A, I
= 150mA, I
= 300mA, I
= 3V, I
= 20V, I
= 19V, I
= 0.5V, I
= 50V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
D
E
C
E
C
E
B
E
C
C
C
= 0
C
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0
= 0
B
B
= 20mA, f = 100MHz,
= 0, f = 1MHz
= 0, Note 1
= 0
D
= 10mA
= 150mA
= 300mA
= 0, f = 1MHz
= 15mA
= 30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
100
200
40
60
75
30
5
–
–
–
–
–
–
Typ
350
4.5
17
–65 to +200 C
–65 to +200 C
–
–
–
–
–
–
–
–
–
–
15.2mW/ C
Max
0.4
1.6
8.0
5.2mW/ C
50
50
30
–
–
–
–
–
–
–
500mA
0.65W
Unit
MHz
1.9W
nA
nA
pF
pF
V
V
V
V
V
30V
60V
5V
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NTE2321 Summary of contents
Page 1
... Output Capacitance Input Capacitance Note 1. Pulse test: Pulse Width NTE2321 Silicon NPN Transistor Quad, General Purpose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Switching Characteristics Turn–On Time Turn–Off Time 14 1 .785 (19.95) Max .100 (2.45) .600 (15.24) = +25 C unless otherwise specified) A Symbol Test Conditions 30V BE(off ...