VTP3310LAH Excelitas Technologies Sensors, VTP3310LAH Datasheet - Page 2

• Manufacturer Part Number: VTP3310LAH
• Description: SILICON PHOTODIODES
• Manufacturer: Excelitas Technologies Sensors

Specifications of VTP3310LAH

• Active Area: 0.0011 sq.in.
• Angle, Response: ±20 °
• Capacitance, Junction: 25 pF
• Current, Dark: 35 nA
• Current, Short Circuit: 36 μA
• Package Type: T-1
• Primary Type: Photo
• Resistance, Shunt: 10
• Spectral Application Range: 400 to 1150
• Spectral Sensitivity: 0.55
• Temperature, Operating: -40 to +100 °C
• Voltage, Breakdown: 140 V
• Voltage, Open Circuit: 350 mV
• Lead Free Status / Rohs Status: RoHS Compliant part

VTP Process Photodiodes
FEATURES
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Visible to enhanced IR spectral range
Integral visible rejection filters available
Response @ 940 nm, 0.60 A/W, typical
-1 to 2% linearity over 7 to 9 decades
Low dark currents
High shunt resistance
High reverse voltage rating
Low capacitance
FAST RESPONSE, HIGH DARK RESISTANCE
VTP PROCESS
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PRODUCT DESCRIPTION
Photodiodes in this series have been designed for low junction
capacitance. The lower the capacitance, the faster the response
of the diode. Also, speed can be further increased by reverse
biasing the diodes which lowers the capacitance even more.
These diodes have excellent response in the IR region and are
well matched to IR LEDs. Responsivity is categorized at 940 nm
(GaAs LED). Some diodes are available in packages which
incorporate a visible rejection filter effectively blocking any light
below 700 nm.
Diodes made with the VTP process are suitable for operation
under reverse bias conditions but may be used in the
photovoltaic mode. Typical reverse breakdown voltages are
around 140 V. Low dark currents under reverse bias are also a
feature of this series.