ES1D-E3/61T General Semiconductor / Vishay, ES1D-E3/61T Datasheet

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ES1D-E3/61T

Manufacturer Part Number
ES1D-E3/61T
Description
Ultrafast Rectifier, Plastic Surface Mount, 1 A, 200 VDC, DO0214AC (SMA), RoHS
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of ES1D-E3/61T

Capacitance, Junction
10 pF
Current, Forward
1 A
Current, Reverse
100 μA
Current, Surge
30 A
Package Type
DO-214AC (SMA)
Primary Type
Rectifier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
35 ns
Voltage, Forward
0.92 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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ES1A thru ES1D
Vishay General Semiconductor
650
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AC (SMA)
Surface Mount Ultrafast Plastic Rectifier
A
= 25 °C unless otherwise noted)
50 V to 200 V
150 °C
0.92 V
15 ns
1.0 A
30 A
SYMBOL
T
V
J
V
I
I
V
, T
F(AV)
FSM
RRM
RMS
DC
STG
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
ES1A
EA
50
35
50
peak of 260 °C
and WEEE 2002/96/EC
use
in
ES1B
100
100
EB
70
- 55 to + 150
high
30
1
frequency
ES1C
150
105
150
EC
rectification
ES1D
200
140
200
ED
UNIT
°C
V
V
V
A
A
and

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ES1D-E3/61T Summary of contents

Page 1

... ES1A thru ES1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AC (SMA) PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) A PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8 ...

Page 2

... Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) ES1D-E3/61T 0.064 ES1D-E3/5AT 0.064 (1) ES1DHE3/61T 0.064 (1) ES1DHE3/5AT 0.064 Note: ...

Page 3

... ES1A thru ES1D Vishay General Semiconductor 100 T = 150 ° 125 ° 100 ° °C J 0.01 0.2 0.4 0.6 0.8 1.0 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 1000 T = 150 ° 125 °C J 100 T = 100 ° ° Percent of Rated Peak Reverse Voltage (%) Figure 4 ...

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