HFA30PB120PBF Vishay PCS, HFA30PB120PBF Datasheet - Page 4

• Manufacturer Part Number: HFA30PB120PBF
• Description: Diode, HEXFRED, 1200V 30A, TO-247 (2 Pin)
• Manufacturer: Vishay PCS

Specifications of HFA30PB120PBF

• Capacitance, Junction: 75 pF
• Configuration: Common Cathode
• Current, Forward: 30 A
• Current, Surge: 120 A
• Package Type: TO-247AC Modified
• Power Dissipation: 350 W
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.36 K/W
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 47 ns
• Voltage, Forward: 4.1 V
• Voltage, Reverse: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
SYMBOL
DIMENSIONS in millimeters and inches
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
ΦP to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
A1
A2
D1
b1
b2
b3
b4
b5
c1
D
A
b
c
Planting
19.71
13.08
(2) R/2
MIN.
MILLIMETERS
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
(5) L1
2 x R
D
(2)
2 x b2
3 x b
(c)
B
C
Section C - C, D - D, E - E
MAX.
0.098
20.70
5.31
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
1
-
(b1, b3, b5)
(b, b2, b4)
2
b4
E
(3)
E/2
0.183
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
1.50
(4)
3
2 x e
INCHES
S
c1
Base metal
D
L
MAX.
0.209
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
2.49
-
See view B
TO-247 modified
NOTES
3
4
D D E
A
A1
View B
C
A2
D
A
A
E
SYMBOL
C
ΦP1
ΦK
ΦP
D2
E1
L1
E
N
Q
R
S
e
L
C
Thermal pad
15.29
13.72
14.20
0.452
MIN.
MILLIMETERS
3.71
0.51
3.56
5.31
Vishay High Power Products
D2
-
Lead assignments
HEXFET
1. - Gate
2. - Drain
3. - Source
4. - Drain
IGBTs, CoPAK
1. - Gate
2. - Collector
3. - Emitter
4. - Collector
(6) ΦP
5.46 BSC
7.62 BSC
5.51 BSC
2.54
Outline Dimensions
MAX.
15.87
16.10
4.29
6.98
A
1.30
3.66
5.69
5.49
-
View A - A
(4)
E1
4
0.020
0.602
0.540
0.559
0.146
0.209
0.178
MIN.
0.14
(Datum B)
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
-
0.215 BSC
0.217 BSC
INCHES
ΦP1
0.010
3
D1 (4)
MAX.
0.051
0.625
0.634
0.169
0.144
0.275
0.224
0.216
-
NOTES
3
1