NTE66 NTE Electronics, Inc., NTE66 Datasheet - Page 2

• Manufacturer Part Number: NTE66
• Description: MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.1Ohm; ID 14A; TO-220; PD 77W; VGS +/-20V; -55d
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE66

• Current, Drain: 14 A
• Gate Charge, Total: 17 nC
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 77 W
• Resistance, Drain To Source On: 0.1 Ohm
• Resistance, Thermal, Junction To Case: 1.62 K⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 7.6 mhos
• Transistor Type: N Channel Enhancement Mode
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 2.5 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
Source–Drain Diode Ratings and Characteristics:
Note 1. Pulse Test: Pulse Width
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Source Leakage, Forward
Gate–Source Leakage, Reverse
Zero Gate Voltage Drain Current
On–State Drain–Source Current
Static Drain–Source On–State
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Resistance
(Gate–Source Plus Gate–Drain)
Parameter
Parameter
Symbol
R
V
BV
I
t
t
C
I
I
C
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
GSS
DSS
g
Q
oss
t
t
rss
DSS
iss
gd
= +25 C unless otherwise specified)
fs
r
gs
f
g
Symbol
300 s, Duty Cycle
300 s, Duty Cycle
V
I
SM
I
t
V
V
V
V
V
V
T
V
V
V
V
V
(MOSFET switching times are essentially
independent of operating temperature)
independent of operating temperature)
V
(Gate charge is essentially independent of
operating temperature)
SD
S
rr
C
GS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DD
GS
= +125 C
> I
= V
= Max. Rating, V
= Max. Rating x 0.8, V
= 10V, I
= 0V, I
= 20V
= –20V
= 10V, I
= 0V, V
= 0.5BV
50V, I
Note 2
T
T
D(on)
C
J
GS
= +25 C, I
= +25 C, I
, I
D
x R
DS
D
D
D
D
DSS
= 250 A
Test Conditions
= 14A, V
= 8.3A, Note 1
= 8.3A, Note 1
= 250 A
= 25V, f = 1MHz
DS(on)
, I
Test Conditions
D
F
S
= 8.3A, Z
max, V
= 14A, dI
GS
= 14A, V
2%.
2%.
DS
= 0V
= 0.8 Max. Rating
GS
GS
F
O
= 0V,
= 10V, Note 1
GS
/dt = 100A/ s
= 12
= 0V
Min
100
2.0
5.1
14
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.10 0.16
Typ
640
240
7.6
3.7
72
10
34
23
24
17
Typ
120
–
–
–
–
–
–
–
7
–
–
–
–100
1000
Max
100
250
4.0
5.5
Max
15
51
35
36
26
11
250
2.5
–
–
–
–
–
–
14
56
mhos
Unit
Unit
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
ns
A
A
V
A
A