DS1244Y-70+ Dallas Semiconductor, DS1244Y-70+ Datasheet - Page 6

• Manufacturer Part Number: DS1244Y-70+
• Description: SRAM, Nonvolatile, 32K x 8, 70 nS, EDIP28
• Manufacturer: Dallas Semiconductor

Specifications of DS1244Y-70+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 256K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 32K×8
• Package Type: EMOD
• Temperature, Operating: 0 to +70 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5.3 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
Read Cycle Time
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
POWER-DOWN/POWER-UP TIMING
V
V
V
V
V
Expected Data Retention Time
Warning : Under no circumstances are negative undershoots of any amplitude allowed when device
is in battery-backup mode.
CE
OE
CE
OE
CE
OE
CE
RESET
CE
CE
CC
PF(min)
CC
CC
PF(min)
Access Time
Access Time
to Output Low-Z
to Output Low-Z
to Output High-Z
to Output High-Z
Pulse Width
at V
at V
Slew from V
Slew from V
Slew from V
(
(
Pulse Width
IH
IH
CE
CE
PARAMETER
PARAMETER
PARAMETER
before Power-Down
after Power-Up
at V
at V
PF
PF
PF(max)
PF(min)
PF(max)
)
)
to V
to
to
SO
SYMBOL
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
ODO
t
t
t
t
t
t
COE
OEE
REC
RST
WC
WR
CW
WP
t
RC
CO
OE
OD
RR
DH
t
DR
DS
PD
FB
R
F
MIN
MIN
MIN
300
11 of 19
1.5
65
10
65
55
10
30
60
65
10
10
5
5
0
0
0
TYP
TYP
TYP
Over the operating range (5V)
Over the operating range (5V)
MAX
MAX
MAX
2.5
55
55
25
25
UNITS
UNITS
UNITS
years
ms
ns
ns
ns
ns
m s
m s
m s
m s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(T
A
= +25°C)
NOTES
NOTES
NOTES
10
5
5
3
4
4
9