NTE283 NTE Electronics, Inc., NTE283 Datasheet
NTE283
Manufacturer Part Number
NTE283
Description
Transistor; NPN; 800 V; 800 V (Min.); 8 V; 10 A; 3 A; 100 W; 1.75 degC/W; 15
Manufacturer
NTE Electronics, Inc.
Type
Horizontal Output, Switchr
Datasheet
1.NTE283.pdf
(2 pages)
Specifications of NTE283
Current, Base
3 A
Current, Collector
10 A
Current, Collector Cutoff
1 mA
Current, Gain
15
Frequency
10 MHz
Gain, Dc Current, Minimum
15
Package Type
TO-3
Polarity
NPN
Power Dissipation
100 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.75 °C/W
Temperature, Operating, Maximum
200 °C
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
325 V
Voltage, Collector To Base
800 V
Voltage, Collector To Emitter
325 V
Voltage, Collector To Emitter, Saturation
3.3 V
Voltage, Emitter To Base
8 V
Voltage, Saturation, Collector To Emitter
3.3 V
Voltage, Sustaining, Collector To Emitter
325 V
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high–
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
Collector–Emitter Voltage (I
Collector–Emitter Voltage (V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width = 300 s, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, non–repetitive pulse.
Collector Cutoff Current
Emitter Cutoff Current
Collector–Base Voltage
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
DC Current Gain
Current Gain–Bandwidth Product
Second Breakdown Collector Current
Continuous
Peak (t
Parameter
p
B
10ms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
B
BE
= 0), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+25 C), P
Horizontal Output, Switch
stg
C
= 0), V
Silicon NPN Transistor
= +25 C unless otherwise specified)
J
Symbol
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
CEO
CEO(su
CE(sat)
I
BE(sat)
I
h
I
CES
EBO
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S/b
f
s)
FE
T
CES
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
I
I
I
I
V
V
V
NTE283
C
C
C
C
CEV
EB
CE
CE
CE
= 1mA, I
= 100mA, I
= 8A, I
= 8A, I
= 8V, I
= 10V, I
= 10V, I
= 25V, Note 2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 800V, V
Test Conditions
B
B
C
E
= 2.5A, Note 1
= 2.5A, Note 1
C
C
= 0
= 0
B
= 2.5A, Note 1
= 500mA
= 0, Note 1
BE
= 0
Min
800
325
15
–
–
–
–
–
4
Typ
10
–
–
–
–
–
–
–
–
–65 to +200 C
Max
3.3
2.2
1
1
–
–
–
–
–
1.75 C/W
+200 C
100W
Unit
MHz
325V
800V
mA
mA
V
V
V
V
A
10A
15A
8V
3A
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NTE283 Summary of contents
Page 1
... Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include switching regulators, PWM inverters, solenoid and relay drivers. Absolute Maximum Ratings: Collector–Emitter Voltage (I Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Turn–On Time Storage Time Fall Time Fall Time .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) = +25 C unless otherwise specified) C Symbol Test Conditions 250V 5A, ...