NTE2382 NTE Electronics, Inc., NTE2382 Datasheet - Page 2

• Manufacturer Part Number: NTE2382
• Description: MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ohm; ID 9.2A; TO-220; PD 50W; VGS +/-20V
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2382

• Current, Drain: 9.2 A
• Gate Charge, Total: 23 nC
• Package Type: TO-220
• Polarization: N-Channel
• Power Dissipation: 50 W
• Resistance, Drain To Source On: 0.27 Ohm
• Resistance, Thermal, Junction To Case: 2.5 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 19 ns
• Time, Turn-on Delay: 8.8 ns
• Transconductance, Forward: 4.1 mhos
• Transistor Type: N Channel Enhancement Mode
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 2.5 V
• Voltage, Gate To Source: ±20 V

Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current, Forward
Gate–Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain–Source On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
(Body Diode)
Parameter
C
= +25 C unless otherwise specified)
V
Symbol
V
r
300 s, Duty Cycle
(BR)DSS
DS(on)
t
t
I
I
I
C
C
V
C
Q
GS(th)
g
d(on)
Q
GSS
GSS
d(off)
I
DSS
Q
SM
I
t
FS
oss
t
t
SD
rss
iss
S
rr
gd
r
f
gs
g
V
V
V
V
V
V
V
V
V
V
MOSFET switching times are
essentially independent of operating
essentially independent of operating
temperature
V
Gate charge is essentially
independent of operating
independent of operating
temperature
Note 3
T
Note 2
T
dI
J
J
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
GS
F
= +25 C, I
= +25 C, I
/dt = 100A/ s
= 100V, V
= 80V, V
= V
= 25V, V
= 0, I
= 20V
= 20V
= 10V, I
= 50V, I
= 10V, V
50V, I
GS
Test Conditions
D
, I
= 0.25mA
D
D
D
D
GS
GS
S
F
DS
= 4.6A, Note 2
= 4.6A, Note 2
= 9.2A, Z
GS
= 0.25mA
= 9.2A,
= 9.2A, V
2%.
= 0, T
= 0, f = 1MHz
= 80V, I
= 0
J
O
= +125 C
D
GS
= 9.2A,
= 18 ,
= 0V,
Min
100
2.0
2.7
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
400
130
110
4.1
8.8
4.6
9.1
40
30
19
20
–
–
–
–
–
–
–
–
–
–
–
–100
Max
0.25
0.27
13.0
100
240
1.0
4.0
9.2
2.5
45
27
30
23
37
–
–
–
–
–
–
–
mhos
Unit
mA
mA
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
A
A
V