NTE2322 NTE Electronics, Inc., NTE2322 Datasheet - Page 2

• Manufacturer Part Number: NTE2322
• Description: Transistor, Bipolar; TO-2018; T-NPN; 40V; 60V; 5V; 600mA; 1.9W; -55 to 125degC; 66degC/W
• Manufacturer: NTE Electronics, Inc.
• Type: General Purpose, Quadr

Specifications of NTE2322

• Current, Collector: 600 mA
• Current, Gain: 30
• Device Dissipation: 1.9 W
• Frequency: 200 MHz
• Gain, Dc Current, Minimum: 30
• Package Type: 14-Lead DIP
• Polarity: PNP
• Power Dissipation: 1.9 W
• Primary Type: Si
• Temperature Range, Junction, Operating: -55 to 125 °C
• Thermal Resistance, Junction To Ambient: 66 °C⁄W
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Base: 60 V (Min.)
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Breakdown, Emitter To Base: 5 V (Min.)
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 VDC
• Voltage, Collector To Emitter, Saturation: 1.6 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.6 V (Max.)

Electrical Characteristics (Cont’d): (T
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Parameter
14
1
.785 (19.95) Max
.600 (15.24)
.100 (2.45)
Collector
Collector
Emitter
Emitter
Symbol
Base
Base
N.C.
C
C
Pin Connection Diagram
f
obo
ibo
T
A
1
2
3
4
5
6
7
= +25 C unless otherwise specified)
8
7
V
V
V
CE
CB
EB
= 2V, I
= 20V, I
= 10V, I
Test Conditions
.200 (5.08)
14
13
12
10
11
C
9
8
.099 (2.5) Min
C
E
= 0, f = 1MHz
Max
= 0, f = 1MHz
= 50mA, f = 100MHz
Collector
Base
Emitter
N.C.
Emitter
Base
Collector
.300 (7.62)
Min
200
–
–
Typ
–
–
–
Max
30
–
8
Unit
MHz
pF
pF