74HC08D,652 Philips Semiconductors, 74HC08D,652 Datasheet - Page 7

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74HC08D,652

Manufacturer Part Number
74HC08D,652
Description
AND-GATE; SO-14; 5.0 V (TYP.); -40; +125; 1000 NS (MAX.) TR; 1000 NS (MAX.) TF
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC08D,652

Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Input, Diode
± 20 mA
Current, Leakage, Input
0.1 uA (Typ.)
Current, Output, Diode
± 20 mA
Current, Quiescent Supply
2 uA (Max.)
Current, Supply
40 μA
Function Type
2-Inputs
Input Fall Time
1000 ns (Max.)
Input Rise Time
1000 ns (Max.)
Logic Function
AND Gate
Logic Type
CMOS
Number Of Circuits
Quad
Package Type
SO-14
Power Dissipation
500 mW (Max.)
Propagation Delay
25 ns
Special Features
Tri-State
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Philips Semiconductors
AC CHARACTERISTICS
Family 74HC08
GND = 0 V; t
T
t
t
T
t
t
T
t
t
PHL
THL
PHL
THL
PHL
THL
SYMBOL
amb
amb
amb
Quad 2-input AND gate
/t
/t
/t
/t
/t
/t
TLH
TLH
TLH
PLH
PLH
PLH
= 25 C
= 40 to +85 C
= 40 to +125 C
f
= t
propagation delay nA,
nB to nY
output transition time
propagation delay nA,
nB to nY
output transition time
propagation delay nA,
nB to nY
output transition time
f
= 6 ns; C
PARAMETER
L
= 50 pF.
see Figs 7 and 8 2.0
see Figs 7 and 8 2.0
see Figs 7 and 8 2.0
see Figs 7 and 8 2.0
see Figs 7 and 8 2.0
see Figs 7 and 8 2.0
WAVEFORMS
TEST CONDITIONS
11
4.5
6.0
4.5
6.0
4.5
6.0
4.5
6.0
4.5
6.0
4.5
6.0
V
CC
(V)
MIN.
25
9
7
19
7
6
TYP.
74HC08; 74HCT08
90
18
15
75
15
13
115
23
20
95
19
16
135
27
23
110
22
19
Product specification
MAX.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT

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