NTE2387 NTE Electronics, Inc., NTE2387 Datasheet - Page 2

• Manufacturer Part Number: NTE2387
• Description: MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 2.7 Ohms; ID 4A; PD 125W; VGS +/-30V; gFS 4.3Mh
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2387

• Application: For high speed switch
• Channel Type: N-Channel
• Current, Drain: 4 A
• Fall Time: 40 ns (Typ.)
• Operating And Storage Temperature: -55 to +150 °C
• Polarization: N-Channel
• Power Dissipation: 125 W
• Resistance, Drain To Source On: 2.7 Ohms
• Resistance, Thermal, Junction To Case: 1 °C⁄W (Max.)
• Temperature, Operating, Maximum: +150 °C
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Time, Rise: 25 ns (Typ.)
• Time, Turn-off Delay: 130 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 4.3 Mhos
• Voltage, Breakdown, Drain To Source: 800 V
• Voltage, Drain To Gate: 800 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±30 V

Electrical Characteristics (Cont’d): (T
Dynamic Characteristics (Cont’d)
Internal Drain Inductance
Internal Source Inductance
Source–Drain Diode Ratings and Characteristics
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
Parameter
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Symbol
I
V
DRM
I
Q
L
L
DR
t
SD
rr
D
S
rr
C
= +25 C unless otherwise specified)
Measured from contact screw on tab
to center of die
Measured from drain lead 6mm from
package to center of die
Measured from the source lead
6mm from package to source
bonding pad
I
I
V
F
F
.420 (10.67)
R
= 4A, V
= 4A, di
= 100V
Max
Test Conditions
GS
F
/dt = 100A/ s, V
= 0
.250 (6.35)
Max
Drain/Tab
Source
GS
(12.7)
(12.7)
= 0,
.110 (2.79)
.500
Max
.500
Min
Min
–
–
–
–
–
–
–
–
1800
Typ
3.5
4.5
7.5
1.0
12
–
–
Max
1.3
16
–
–
–
4
–
–
Unit
nH
nH
nH
ns
A
A
V
C