NTE198 NTE Electronics, Inc., NTE198 Datasheet - Page 2

• Manufacturer Part Number: NTE198
• Description: Transistor, NPN; TO-220; NPN; 400 V; 500 V; 5 V; 1 A; 40 W; -65 to 150 degC; 10
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Powerr

Specifications of NTE198

• Current, Collector: 1 A
• Current, Gain: 30 to 150
• Device Dissipation: 40 W
• Frequency: 10 MHz
• Gain, Dc Current, Minimum: 10
• Package Type: TO-220
• Polarity: NPN
• Power Dissipation: 2 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.125 °C/W
• Temperature, Junction, Operating: -65 to 150 °C
• Thermal Resistance, Junction To Ambient: 62.5 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Base: 500 V
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V

Electrical Characteristics (Cont’d): (T
Note 1. Pulse test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Small–Signal Current Gain
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
.100 (2.54)
Base
Symbol
300 s, Duty Cycle
V
V
CE(sat)
BE(on)
h
h
f
FE
T
fe
C
= +25 C unless otherwise specified)
V
V
I
V
V
V
C
.420 (10.67)
CE
CE
CE
CE
CE
= 1A, I
= 10V, I
Max
= 10V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
B
= 0.2A
C
C
C
C
C
2%.
= 0.2A, f = 2MHz
= 0.3A
= 1A
= 1A
= 0.2A, f = 1kHz
.250 (6.35)
Max
Emitter
Collector/Tab
.110 (2.79)
(12.7)
(12.7)
.500
Max
.500
Min
Min
30
10
10
25
–
–
Typ
–
–
–
–
–
–
Max Unit
150
1.0
1.5
–
–
–
MHz
V
V